Merck Patent Gmbh

Az Electronic Materials (Luxembourg) S.a.r.l.

Az Electronic Materials USA Corp.

Weihong Liu

Chunwei Chen

Medhat A Toukhy

PingHung Lu

SookMee Lai

Ping-Hung Lu

Aritaka Hishida

Jian Yin

Yoshiharu Sakurai

Huirong Yao

Takanori Kudo

Zhong Xiang

Hung-Yang Chen

Hisashi Motobayashi

Stephen Meyer

SangChul Kim

Lei Lu

Pinghung Lu

Sookmee Lai

Sangchul Kim

Disclosed herein is a photosensitive composition comprising a) at least one photoacid generator; b) at least one Novolak polymer; c) at least one acrylate polymer, comprising a component having structure (I); d) at least one glycidyl hydroxy benzoic acid condensate material comprising one or more compounds having structure (II); e) at least one heterocyclic thiol compound comprising a ring structure chosen from the general structures (III), (IIIa) or (IIIb); and f) at least one solvent. Disclose herein are also the methods of using this composition to form a resist pattern and the methods of using these resist patterns to produce metal lines. Disclosed herein are also compounds and mixtures of compounds having structure (II).

Positive working photosensitive material

The present invention relates to resist compositions comprising a polymer component, a photoacid generator component (PAG), a photoactive diazonaphthoquinone component (PAC), a base component, a solvent component, and optionally, a heterocyclic thiol component. The polymer component is a Novolak derivative, comprising Novolak repeat units with free phenolic hydroxy moieties, and Novolak repeat units comprising phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The acetal moiety is elected from a mono functional alkyl acetal moiety protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, an acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety; a di-functional acetal comprising moiety, linking and protecting two repeat units comprising Novolak phenolic hydroxy moieties, forming a linking point in said polymer component between two different polymer chains in said polymer component, and a mixture of any of these three types of acid cleavable acetal moieties. The PAC component is selected from said acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, a free PAC component, and a mixture of these two types of PAC components. The present invention also relates to the methods of using the present compositions in either in thick or thin film photoresist device manufacturing methodologies.

Novolak/DNQ based, chemically amplified photoresist

Describe herein is a composition comprising: an acrylic polymer comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7) wherein these repeat units are present in said acrylic polymer in the mole % ranges as described herein; a Novolak resin having a dissolution rate in 0.26 N aqueous TMAH of at least 50 &#x212b;/sec; a diazonaphthoquinone (DNQ) photoactive compound (PAC); and an organic spin casting solvent, and a process of using said composition as a positive photoresist developable in aqueous base.

DNQ-type photoresist composition including alkali-soluble acrylic resins

A negative working, aqueous base developable, photosensitive photoresist composition and a process of using this composition to produce lithographic images, where this composition is one comprising: a) a polymer containing the four repeat units of structures (1), (2), (3), and (4), but no other types of repeat units; wherein v, x, y and z, respectively, represent the mole % of each repeat units of structures (1), (2), (3) and (4); b) a radical photo-initiator component, which is comprised of at least one radical photo initiator which is activated by a broad absorption of radiation from about 360 nm to about 440 nm; c) a crosslinker component which is either a mixture consisting of crosslinkers of structure (5), (6) and (7), or a single crosslinker of structure (8); d) a radical inhibitor component; e) an optional surfactant component; f) an optional dissolution promoter component; and g) a solvent. The invention also relates to the process of using this negative resist to produce lithographic images.

Negative-working ultra thick film photoresist

Environmentally stable, chemically amplified (CA) positive resist compositions are described. These resist compositions are based on a blend of at least two types of polymer platforms. The first platform is a low activation energy, acetal blocked polyhydroxystyrene (PHS) based resin; the second platform is an acrylate based resin containing a high activation energy acid labile group [such as tertiary-butyl acrylate(t-BA)]. The resist composition also contains a photo-acid generator (PAG), a base quencher, a surfactant dissolved in a suitable solvent. Also described, is the use of these resist composition in a method for forming a photoresist relief image on a substrate.

Enviromentally stable, thick film, chemically amplified resist

The present application for patent relates to a light-sensitive positive working photosensitive composition especially useful for imaging thick films using a composition which gives very good film uniformity and promotes a good process latitude against feature pattern collapse in patterns created upon imaging and developing of these films.

A composition crosslinkable by broad band UV radiation, which after cross-linking is capable of cold ablation by a UV Excimer Laser emitting between 222 nm and 308 nm, where the composition is comprised of a negative tone resist developable in aqueous base comprising and is also comprised of a conjugated aryl additive absorbing ultraviolet radiation strongly in a range between from about 220 nm to about 310 nm. The present invention also encompasses a process comprising steps a), b) and c) The present invention also encompasses a process comprising steps a'), b&#x2032;) c&#x2032;) and d&#x2032;)

Negative-working photoresist compositions for laser ablation and use thereof

The invention relates to a novel positive working photosensitive composition having: at least one photoacid generator; at least one novolak polymer; at least one polymer, having a polymer backbone, said polymer comprising a structure of the following formula: wherein R-Rare, independently, &#x2014;H or &#x2014;CH, A is a linear or branched C-Calkylene group, B is a C-Calkyl or alicyclic group, D is a linking group that may be a chemical bond, a carboxylate group, wherein the carbonyl carbon is bonded to the polymer backbone, or a &#x2014;COOCH&#x2014; group, wherein the carbonyl carbon is bonded to the polymer backbone, Ar is a substituted or unsubstituted aromatic group or heteroaromatic group, E is a linear or branched C-Calkylene group, G is an acid cleavable group. The invention further relates to a process for using the novel composition for forming an image.

Positive photosensitive material

Disclosed are compositions for negative-working thick film photophotoresists based on acrylic co-polymers. Also included are methods of using the compositions.

Negative-working thick film photoresist

Disclosed herein is a photosensitive composition comprising a heterocyclic thiol compound or tautomeric form thereof and its method of use on a substrate, which may include a chalcophile substrate.

The present invention relates to an antireflective composition comprising a polymer, a thermal acid generator and optionally a crosslinking agent, where the polymer comprises at least one hydrophobic unit (1), at least one chromophore unit (2), at least one unit with a crosslinking site (3) and optionally a unit capable of crosslinking the polymer, where, Rto Rare independently selected from hydrogen and C-Calkyl, Wis a fully or partially fluorinated alkylene group, X is selected from F, H and OH; Wcomprises a chromophore group, and WY comprises a crosslinking site. The invention also relates to a process for using the antireflective coating composition.

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Bridgewater, NJ, United States of America

Weihong Liu