Texas Instruments Corporation

Applied Materials, Inc.

Wei-Yung Hsu

Qi-Zhong Hong

Jiong-Ping Lu

Liang-Yuh Chen

Daniel A Carl

Ratson Morad

Alain Duboust

Ming J Hwang

Lizhong Sun

Sen-Hou Ko

Shin-Puu Jeng

Guoqiang Xing

David P Bour

Hua Chung

Hiroji Hanawa

Feng Quan Liu

Sasson Roger Somekh

Robert H Havemann

Anzhong Chang

Antoine P Manens

David H Quach

Donald J K Olgado

Robert Yung-Hsi Tsu

Changming Jin

Dirk N Anderson

Duane E Carter

Alexander Tam

Sumedh Acharya

Sang Won Kang

Yufei Chen

Kyawwin Jason Maung

Xizi Dong

Tianbao Du

Doohan Lee

Scott Robert Summerfelt

Harry Q Lee

Stan D Tsai

Hichem M'Saad

Yan Wang

Thomas H Osterheld

Girish Anant Dixit

Chih-Chen Cho

Richard L Guldi

Kelly Jay Taylor

Yongqi Hu

Wen-Chiang Tu

Robert Kraft

Donald J Olgado

Yuchun Wang

Gopalakrishna B Prabhu

Somnath S Nag

Gary C Ettinger

Zhihong Wang

Huanbo Zhang

Ho Seon Shin

James Chang Wang

Ming-Jang Hwang

Mukul Saran

Paul C McIntyre

Anand N Iyer

Richard Allen Faust

Benjamin A Bonner

Anthony J Konecni

Abha Rani Singh

Shi-Ping Wang

Christopher W Smith

James F Garvin, Jr

Robert A Ewald

August J Fischer

Deepak N Kumar

Boyang Lin

Dick N Anderson

Hung K Nguyen

Erik C Wasinger

Jose Salas-Vernis

Yong-Sik R Kim

Vincent T Cordasco

Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.

Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas

Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass

In one embodiment a method is provided for maintaining a substrate processing surface. The method generally includes performing a set of measurements on the substrate processing surface, wherein the set of measurements are taken using a displacement sensor coupled to a processing surface conditioning arm, determining a processing surface profile based on the set of measurements, comparing the processing surface profile to a minimum profile threshold, and communicating a result of the profile comparison.

CMP pad thickness and profile monitoring system

A method and apparatus for extending a polishing article lifetime on a polishing tool with multiple platens is described. The apparatus includes an advanceable roll to roll platen with multiple embodiments of a polishing article to be used thereon. The polishing article is adapted to perform a polishing process by removing conductive and dielectric material from a substrate while minimizing downtime of the polishing tool. In some embodiments, the polishing article may be a dielectric material or a conductive material and is configured to include a longer usable lifetime to minimize replacement and downtime of the tool.

Extended pad life for ECMP and barrier removal

Apparatus and methods adapted to polish an edge of a substrate include a polishing film, a frame adapted to tension and load the polishing film so that at least a portion of the film is supported in a plane, and a substrate rotation driver adapted to rotate a substrate against the plane of the polishing film such that the polishing film is adapted to apply force to the substrate, contour to an edge of the substrate, the edge including at least an outer edge and a first bevel, and polish the outer edge and the first bevel as the substrate is rotated. Numerous other aspects are provided.

Methods and apparatus for processing a substrate

A method of operating a polishing apparatus in which a substrate is held with a carrier head supported by a movable support of the polishing apparatus, the substrate is brought into contact with a polishing surface at a polishing station of the polishing apparatus and the substrate is polished, the substrate is removed from the polishing surface, the support moves to transfer the carrier head to a different station of the polishing apparatus, and the polishing surface is conditioned. The conditioning overlaps with at least one of removing the substrate or moving the support.

Polishing pad conditioning process

A retaining ring for chemical mechanical polishing is described. The ring has a bottom surface with non-intersecting grooves. Alternating grooves are at opposing angles to one another.

Grooved retaining ring

A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises a first chelating agent, a second chelating agent, a first corrosion inhibitor, a second corrosion inhibitor, a suppressor, a solvent, and an inorganic acid based electrolyte to provide a pH between about 3 and about 10.

Method and composition for electrochemical mechanical polishing processing

A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc. During the deposition, the partial enclosure and the substrate are rotated relative one another.

Integrated multi-step gap fill and all feature planarization for conductive materials

Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.

Method and composition for polishing a substrate

Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Methods for reducing delamination during chemical mechanical polishing

Aspects of the present invention include a method and an apparatus that may be utilized to adjust processing times in a substrate processing system. In one embodiment of the present invention, a pre-processing thickness measurement of a substrate while the substrate is in one of the polishing stations is taken. Then the substrate is processed in the polishing system for a predetermined processing time. A post-processing thickness measurement is taken while the substrate is in one of the polishing stations. A removal rate is calculated based on the pre-processing and the post-processing measurements and the predetermined processing time. A processing time is adjusted for one or more of the polishing stations based on the removal rate for use in subsequent processing of a production substrate.

Method for adjusting substrate processing times in a substrate polishing system

A versatile system providing Cr-based diffusion barriers and electrode structures utilizing such barriers is disclosed, including a semiconductor substrate (), a dielectric layer () disposed upon the substrate, a Cr-based conductive layer () disposed upon the dielectric layer, and an electrode layer () disposed upon the conductive layer.

Versatile system for chromium based diffusion barriers in electrode structures

A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a fist distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.

Method and apparatus for electro-chemical processing

Growing community of inventors

Santa Clara, CA, United States of America

Wei-Yung Hsu