United Microelectronics Corp.

National Cheng-kung University

Wei-Ting Wu

Ming-Shing Chen

Ming-Hui Chang

Jih-Jen Wu

Jen-Sue Chen

Chao-Chun Ning

Chin-Sheng Yang

Horng-Nan Chern

Chorng-Lih Young

Jow-Lay Huang

Ching-Mei Wang

Kun-Keng Chiang

Min-Da Hsieh

Ying-Chou Lai

Wen-Pin Liao

A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Fabricating method of lateral-diffused metal oxide semiconductor device

Provided is a semiconductor device including a P-type substrate, a P-type first well region, an N-type second well region, a gate, N-type source and drain regions, a dummy gate and an N-type deep well region. The first well region is in the substrate. The second well region is in the substrate proximate to the first well region. The gate is on the substrate and covers a portion of the first well region and a portion of the second well region. The source region is in the first well region at one side of the gate. The drain region is in the second well region at another side of the gate. The dummy gate is on the substrate between the gate and the drain region. The deep well region is in the substrate and surrounds the first and second well regions. An operation method of the semiconductor device is further provided.

Semiconductor device and operating method thereof

Lateral-diffused metal oxide semiconductor device and fabricating method thereof

A LDMOS includes a gate structure disposed on the surface of a semiconductor substrate, a source region having a first conductivity type, a drain region having the first conductivity type, an isolation region surrounding the source/drain regions, a doped region having a second conductivity type, and a base region having the second conductivity type formed in the doped region. The source/drain regions are respectively disposed on two sides of the gate structure. The doped region surrounds the isolation region, and the bottom of the doped region is deeper than the bottom of the isolation region. The base region is disposed at the surface of the semiconductor substrate.

Lateral diffused metal-oxide-semiconductor device

A method for manufacturing an oxide thin film comprises: providing a coating material composed of a first precursor material, a fuel material and a solvent; coating the coating material on a substrate; and annealing the coated coating material on the substrate to convert the coated coating material into an oxide thin film.

Method for manufacturing an oxide thin film

An electrochromic device is provided. The electrochromic device includes a first substrate, an electrochromic layer, an electrode, an electrolyte layer and a second substrate. The electrochromic layer is formed on the first substrate, the electrode is disposed on the electrochromic layer, and the electrolyte layer is disposed between the electrode and the second substrate.

Electrochromic device and storage device and manufacturing method thereof

A photovoltachromic device includes a photoelectrode, a counter electrode electrically connected to the photoelectrode, and an electrolyte layer disposed between the photoelectrode and the counter electrode. The photoelectrode includes a first transparent electrode, an electron-transport layer disposed on the first transparent electrode, and a sensitizing layer disposed on the electron-transport layer. The counter electrode includes a second transparent electrode and an electrochromic layer disposed on the second transparent electrode. The second transparent electrode contacts both of the electrolyte layer and the electrochromic layer thereby accelerating the response times for coloring and bleaching the photovoltachromic device.

Photovoltachromic device and the application thereof

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Tainan, Taiwan

Wei-Ting Wu