Nova Measuring Instruments Ltd.

Applied Materials, Inc.

Adesto Technologies Corporation

Globalfoundries U.S. Inc.

Crossbar, Inc.

Nova Corporation

Revera, Incorporated

Appiled Materials, Inc.

Adesto Technologies France Sarl

Wei Ti Lee

Heath A Pois

Ted Tie Guo

Charles Thomas Larson

Mark Klare

Jeffrey Allan Shields

Yi Ma

Alan A Ritchie

Michael C Kwan

Kavita Shah

Cornel Bozdog

Steve H Chiao

Lawrence V Bot

Hoon Sik Kim

Seshadri Ganguli

Sang Ho Yu

Foroozan Sarah Koushan

Chakravarthy Gopalan

Hyoung-Chan Ha

Sang-Hyeob Lee

Sang-Ho Yu

John Sanchez

John Ross Jameson

James Chen

Janet Wang

John Ross Jameson, Iii

Laxmi Warad

Mohd Fadzli Anwar Hassan

Saurabh Singh

Dmitry Kislitsyn

Parker Lund

Benny Tseng

Srinivas Gandikota

Xianmin Tang

Venkatesh P Gopinath

Yu Lei

Sundar Narayanan

Gongda Yao

Natividad Vasquez

Mark D Kellam

Alok Vaid

Kevin Vincent Moraes

Kuei-Chang Tsai

Philippe Blanchard

Ryeun Kwan Kim

Wee Chen Gan

Yen-Chih Wang

Hyung Chul Park

Sang Hyeob Lee

A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

Characterizing and measuring in small boxes using XPS with multiple measurements

XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

XPS metrology for process control in selective deposition

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

Method and system for non-destructive metrology of thin layers

Resistive switching memory cells having filament-based switching mechanisms are provided. By way of example, resistive switching memory cells having resistive filaments constrained to a core of the cell are disclosed. In other examples, methods for fabricating resistive switching memory cells to constrain a conductive filament formed in the resistive switching memory cell to a central portion of core of the cell are disclosed.

Resistive switching memory having confined filament formation and methods thereof

A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure.

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

Feed-forward of multi-layer and multi-process information using XPS and XRF technologies

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

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San Jose, CA, United States of America

Wei Ti Lee