Applied Materials, Inc.

Wei Tang

Srinivas Gandikota

Seshadri Ganguli

Xinliang Lu

Yu Lei

Maitreyee Mahajani

Shih Chung Chen

Atif Noori

Arkaprava Dan

Wenyi Liu

Jianqiu Guo

A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

Method of tuning film properties of metal nitride using plasma

Growing community of inventors

Santa Clara, CA, United States of America

Wei Tang