Other

Applied Materials, Inc.

Wei-Nan Jiang

Jeffrey D Chinn

Thorsten B Lill

Meihua Shen

Michael N Grimbergen

Jitske Trevor

Oranna Yauw

A substrate processing apparatus comprises a chamber capable of processing a substrate . A radiation source provides radiation that is at least partially reflected from the substrate in the chamber. A radiation detector is provided to detect the reflected radiation and generate a signal. A controller is adapted to receive the signal and determine a property of the substrate in situ during processing, before an onset of during or after processing of a material on the substrate

Substrate monitoring method and apparatus

A method of etching a silicon-containing material in a substrate comprises placing the substrate in a process chamber and exposing the substrate to an energized gas comprising fluorine-containing gas, chlorine-containing gas and sidewall-passivation gas. The silicon-containing material on the substrate comprises regions having different compositions, and the volumetric flow ratio of the fluorine-containing gas, chlorine-containing gas, and sidewall-passivation gas is selected to etch the compositionally different regions at substantially similar etch rates.

Self-cleaning process for etching silicon-containing material

Growing community of inventors

San Jose, CA, United States of America

Wei-Nan Jiang