Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Jin Li

Chung-Chi Ko

Wan-Yi Kao

Tien-I Bao

Chih-Tang Peng

Yu-Cheng Shiau

Han-Sheng Weng

A method for forming a semiconductor structure is provided. The method includes patterning a semiconductor substrate to form a first semiconductor fin and a second semiconductor fin, and depositing a first dielectric material on the first and second semiconductor fins. There is a trench between the first and second semiconductor fins. The method also includes depositing a semiconductor material on the first dielectric material, heating the semiconductor material to cause the semiconductor material to flow to a bottom region of the trench, filling a top region of the trench with a second dielectric material, and heating the first dielectric material, the second dielectric material, and the semiconductor material to form an isolation structure between the first and second semiconductor fins.

Method for forming isolation structure having improved gap-fill capability

A method for forming a semiconductor structure is provided. The method includes patterning a semiconductor substrate to form a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin, and depositing a first dielectric material on the first semiconductor fin and the second semiconductor fin on the semiconductor substrate using an atomic layer deposition process. There is a first trench between the first semiconductor fin and the second semiconductor fin. The method also includes filling the first trench with a flowable dielectric material, and heating the flowable dielectric material and the first dielectric material to form an isolation structure between the first semiconductor fin and the second semiconductor fin.

Gap-fill method having improved gap-fill capability

Growing community of inventors

Hsinchu, Taiwan

Wei-Jin Li