Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Jhan Tsai

Ching-Hua Hsieh

Kai-Fung Chang

Sheng-Feng Weng

Ming-Yu Yen

Chih-Wei Lin

Chao-Wei Li

Ching-Yao Lin

Kai-Ming Chiang

Chao-Wei Chiu

A semiconductor package includes a first redistribution circuit structure, a semiconductor die, and an electrically conductive structure. The semiconductor die is disposed over and electrically coupled to the first redistribution circuit structure. The electrically conductive structure connects a non-active side of the semiconductor die to a conductive feature of the first redistribution circuit structure, where the semiconductor die is thermally coupled to the first redistribution circuit structure through the electrically conductive structure, and the electrically conductive structure includes a structure of multi-layer with different materials.

Semiconductor package with electrically conductive structure and manufacturing method thereof

A package structure including a semiconductor die, an encapsulant, a redistribution structure, and a through insulating via is provided. The first redistribution structure includes an insulating layer and a circuit layer. The semiconductor die is disposed on the first redistribution structure. The semiconductor die includes a semiconductor base, through semiconductor vias, a dielectric layer, and bonding connectors. Through semiconductor vias penetrate through the semiconductor base. The dielectric layer is disposed on a backside of the semiconductor base. The dielectric layer of the semiconductor die is bonded with the insulating layer of the first redistribution structure. The bonding connectors are embedded in the dielectric layer and connected to the through semiconductor vias. The bonding connectors of the semiconductor die are bonded with bonding pads of the circuit layer. The encapsulant is disposed on the first redistribution structure and encapsulates the semiconductor die.

Package structure and manufacturing method thereof

A package structure includes a first redistribution circuit structure, a semiconductor die, a connecting film, and a second redistribution circuit structure. The first redistribution circuit structure includes a dielectric structure and a routing structure disposed therein, where the dielectric structure includes a trench exposing the routing structure. The semiconductor die is disposed on and electrically coupled to the first redistribution circuit structure. The connecting film is disposed in the trench and between the semiconductor die and the first redistribution circuit structure, and the semiconductor die is thermally coupled to the routing structure through the connecting film. The second redistribution circuit structure is disposed on and electrically coupled to the semiconductor die, the second redistribution circuit structure is electrically coupled to the first redistribution circuit structure, and the semiconductor die is disposed between the first redistribution circuit structure and the second redistribution circuit structure.

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Kaohsiung, Taiwan

Wei-Jhan Tsai