Globalfoundries Inc.

Wei-Hua Tong

Xusheng Kevin Wu

Yong Meng Lee

Xin Wang

Lun Zhao

Wen-Pin Peng

Yue Hu

Methods for forming a trench silicide without gouging the silicon source/drain regions and the resulting devices are disclosed. Embodiments include forming first and second dummy gates, each with spacers at opposite sides thereof, on a substrate; forming eSiGe source/drain regions at opposite sides of the first dummy gate; forming raised source/drain regions at opposite sides of the second dummy gate; forming a silicon cap on each of the eSiGe and raised source/drain regions; forming an ILD over and between the first and second dummy gates; replacing the first and second dummy gates with first and second HKMG, respectively; forming a contact trench through the ILD into the silicon cap over each of the eSiGe and raised source/drain regions; and forming a silicide over the eSiGe and raised source/drain regions.

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Mechanicville, NY, United States of America

Wei-Hua Tong