Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Hsun Lin

Hung-Chih Lin

Mill-Jer Wang

Ching-Nen Peng

Yu-Ting Lin

Sen-Kuei Hsu

Yinlung Lu

Jun He

Yung-Liang Kuo

De-Jian Liu

Hao Chen

Chung-Han Huang

The present disclosure provides a method and a system for testing semiconductor device. The method includes providing a device under test (DUT) having an input terminal and an output terminal; applying a voltage having a first voltage level to the input terminal of the DUT during a first period; applying a stress signal to the input terminal of the DUT during a second period subsequent to the first period; obtaining an output signal in response to the stress signal at the output terminal of the DUT; and comparing the output signal with the stress signal. The stress signal includes a plurality of sequences, each having a ramp-up stage and a ramp-down stage. The stress signal has a second voltage level and a third voltage level.

Method and device for wafer-level testing

The present disclosure provides a method and a system for testing semiconductor device. The method includes the following operations. A wafer having an IC formed thereon is provided. The IC is energized by raising the voltage of the IC to a first voltage level during a first period. A stress signal is applied to the IC. The stress signal includes a plurality of sequences during a second period subsequent to the first period. Each of the sequence has a ramp-up stage and a ramp-down stage. The stress signal causes the voltage of the IC to fluctuate between a second voltage level and a third voltage level. Whether the IC complies with a test criterion is determined after applying the stress signal.

Method and system for wafer-level testing

A testing apparatus with reduced warping of the probe card and a method of reducing warping of a probe card of a testing apparatus are disclosed. The testing apparatus can include a testing head and a platform opposite the testing head, where the testing head and platform move relative to one another to bring a sample into contact with probing tips of the testing apparatus. The testing head can include a probe card printed circuit board, a stiffener, a discontinuous backer and a plurality of probing tips. The stiffener can be coupled to and reinforcing the probe card. The discontinuous backer can extend from the probe card to the stiffener, and can include at least one unfilled void extending from the stiffener to the probe card. The plurality of probing tips can extend from a distal end of the testing head.

Devices for high-density probing techniques and method of implementing the same

A system for testing a device under test (DUT) includes a probe card and a test module. The probe card includes probe beds electrically coupled to a circuit board and a first plurality of electrical contacts coupled to the circuit board, which are for engaging respective ones of a plurality of electrical contacts of a test equipment module. Probes are coupled to respective probe beds and are disposed to engage electrical contacts of the DUT. The probe card includes a second plurality of electrical contacts coupled to the circuit board. The first and second pluralities of contacts are mutually exclusive. The test module includes a memory, a processor, and a plurality of electrical contacts electrically coupled to respective ones of the second plurality of electrical contacts of the probe card. The circuit board includes a first electrical path for electrically coupling the test equipment module to the test module.

Integrated circuit test system and method

Test-yield improvement devices for high-density probing techniques and method of implementing the same

Growing community of inventors

Zhubei, Taiwan

Wei-Hsun Lin