United Microelectronics Corp.

Wei-Hsu Wang

Ping-Chung Chung

Tsan-Chi Chu

Cheng-Yuan Yao

Wei-Hao Lee

The present invention provides a method of cleaning a chamber of a CVD machine and elements within. A gas mixture of carbon tetrafluoride (CF ) and perfluoro ethane (C F ) is first injected into the chamber. After performing a surface treatment, comprising a sandblasting step or a polishing step, on the surfaces of the elements, the elements are then immersed in a cleaning solution, comprising at least ammonia water (NH OH) and hydrogen peroxide (H O ) at a temperature maintained between 40&deg; C. to 70&deg; C. Finally, the temperature of the cleaning solution is raised so that the residual layer on the surface of the elements can drop from the surfaces of the heater and the process kits or dissolve into the cleaning solution.

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Kao-Hsiung Hsien, Taiwan

Wei-Hsu Wang