Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Han Fan

Yimin Huang

Wei-Yang Lee

Ming-Huan Tsai

Chun-Fai Cheng

Tzu-Hua Chiu

Chia-Pin Lin

Yu-Hsien Lin

Yun Jing Lin

Kuan-Hao Cheng

Po-Yu Lin

Hsueh-Chang Sung

Han-Ting Tsai

Chii-Ming M Wu

Chun-Feng Nieh

Hsiang-Ku Shen

Wei-Yuan Lu

Tzu-Chung Wang

Te-Jen Pan

Sai-Hooi Yeong

Yee-Chia Yeo

Yu-Lin Yang

Hsien-Hsin Lin

Chun-Hsiang Fan

Wei Hao Lu

Wei-Min Liu

Hui OuYang

LI-Li Su

Ka-Hing Fung

I-Hsieh Wong

Kuan-Chung Chen

Haiting Wang

Hsien-Ching Lo

Alex Lee

Po Shao Lin

Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes a first semiconductor layers and a second semiconductor layers alternatively disposed, the first semiconductor layers and the second semiconductor layers being different in composition; patterning the semiconductor stack to form a semiconductor fin; forming a dielectric fin next to the semiconductor fin; forming a first gate stack on the semiconductor fin and the dielectric fin; etching to a portion of the semiconductor fin within a source/drain region, resulting in a source/drain recess; and epitaxially growing a source/drain feature in the source/drain recess, defining an airgap spanning between a sidewall of the source/drain feature and a sidewall of the dielectric fin.

Source and drain engineering process for multigate devices

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin over the base. The semiconductor device structure includes a gate stack over a top portion of the fin. The semiconductor device structure includes a first nanostructure over the fin and passing through the gate stack. The semiconductor device structure includes a second nanostructure over the first nanostructure and passing through the gate stack. The first nanostructure is thicker than the second nanostructure. The semiconductor device structure includes a stressor structure over the fin and connected to the first nanostructure and the second nanostructure.

Semiconductor device structure and method for forming the same

A semiconductor device includes a base portion on a semiconductor substrate, a channel layer vertically above the base portion and extending parallel to a top surface of the semiconductor substrate, a gate portion between the channel layer and the base portion, a source/drain feature connected to the channel layer, an inner spacer between the source/drain feature and the gate portion, and an air gap between the source/drain feature and the semiconductor substrate. Moreover, a bottom surface of the source/drain feature is exposed in the air gap.

Spacer features for nanosheet-based devices

A semiconductor device and a method of forming the same are provided. In an embodiment, an exemplary semiconductor device includes a vertical stack of channel members disposed over a substrate, a gate structure wrapping around each channel member of the vertical stack of channel members, and a source/drain feature disposed over the substrate and coupled to the vertical stack of channel members. The source/drain feature is spaced apart from a sidewall of the gate structure by an air gap and a dielectric layer, and the air gap extends into the source/drain feature.

Inner spacer features for multi-gate transistors

A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Epitaxial structures exposed in airgaps for semiconductor devices

A method of forming a semiconductor including forming a source/drain feature adjacent to a semiconductor layer stack disposed over a substrate. The method further includes forming a dummy fin adjacent to the source/drain feature and adjacent to the semiconductor layer stack. The method further includes performing an etching process from a backside of the substrate to remove a first portion of the dummy fin adjacent to the source/drain feature, thereby forming a first trench in the dummy fin, where the first trench extends from the dummy fin to the source/drain feature. The method further includes forming a first dielectric layer in the first trench and replacing a second portion of the dummy fin with a source/drain contact.

Self-aligning backside contact process and devices thereof

A semiconductor structure is provided. The semiconductor structure includes a first nanostructure stacked over and spaced apart from a second nanostructure, a gate stack wrapping around the first nanostructure and the second nanostructure, a source/drain feature adjoining the first nanostructure and the second nanostructure, and a first inner spacer layer interposing the gate stack and the source/drain feature and interposing the first nanostructure and the second nanostructure. A dopant in the source/drain feature has a first concentration at an interface between the first inner spacer layer and the source/drain feature and a second concentration at a first distance away from the interface. The first concentration is higher than the second concentration.

Semiconductor structure and method for forming the same

An integrated circuit device includes a gate stack disposed over a substrate. A first L-shaped spacer is disposed along a first sidewall of the gate stack and a second L-shaped spacer is disposed along a second sidewall of the gate stack. The first L-shaped spacer and the second L-shaped spacer include silicon and carbon. A first source/drain epitaxy region and a second source/drain epitaxy region are disposed over the substrate. The gate stack is disposed between the first source/drain epitaxy region and the second source/drain epitaxy region. An interlevel dielectric (ILD) layer disposed over the substrate. The ILD layer is disposed between the first source/drain epitaxy region and a portion of the first L-shaped spacer disposed along the first sidewall of the gate stack and between the second source/drain epitaxy region and a portion of the second L-shaped spacer disposed along the second sidewall of the gate stack.

Semiconductor device including an epitaxy region

A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.

Source and drain surface treatment for multi-gate field effect transistors

An exemplary method includes forming a dummy gate structure over a substrate and forming a set of spacers adjacent to the dummy gate structure. The set of spacers includes spacer liners disposed on sidewalls of the dummy gate structure and main spacers disposed on the spacer liners. The spacer liners include silicon and carbon. The method further includes forming source/drain epitaxy regions over the substrate. The source/drain epitaxy regions are disposed adjacent to the set of spacers, such that the dummy gate structure is disposed between the source/drain epitaxy regions. The method further includes removing the main spacers after forming the source/drain epitaxy regions. The method further includes replacing the dummy gate structure with a gate structure, where the replacing includes removing the dummy gate structure to form a trench defined by the spacers liners, such that the gate structure is formed in the trench.

An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of an integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite to the LDD region.

Method of manufacturing strained source/drain structures

A method is described which includes providing a substrate and forming a first spacer material layer abutting a gate structure on the substrate. A second spacer material layer is formed adjacent and abutting the gate structure and overlying the first spacer material layer. The first spacer material layer and the second spacer material layer are then etched concurrently to form first and second spacers, respectively. An epitaxy region is formed (e.g., grown) on the substrate which includes an interface with each of the first and second spacers. The second spacer may be subsequently removed and the first spacer remain on the device decreases the aspect ratio for an ILD gap fill. An example composition of the first spacer is SiCN.

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Hsin-Chu, Taiwan

Wei-Han Fan