Shin-etsu Handotai Co., Ltd.

Wei Feig Qu

Norihiro Kobayashi

Masaro Tamatsuka

Takatoshi Nagoya

Hiroshi Takeno

Kiyoshi Mitani

Makoto Iida

Tsuyoshi Ohtsuki

Ken Aihara

Yoshinori Hayamizu

Toru Takahashi

A method for producing a semiconductor wafer having a multilayer film, in production of a semiconductor device by the steps of forming a porous layer on a surface of a semiconductor wafer by changing a surface portion into the porous layer, forming a semiconductor film on a surface of the porous layer to produce a semiconductor wafer having a multilayer film, fabricating a device on the semiconductor film, and producing the semiconductor device by delaminating the semiconductor film along the porous layer, the semiconductor film having the device formed thereon, including flattening the semiconductor wafer after delaminating and reusing the flattened semiconductor wafer, the method further including a thickness adjusting step of adjusting a whole thickness of the semiconductor wafer having a multilayer film to be produced by reusing the semiconductor wafer so as to satisfy a predetermined standard.

Semiconductor substrate having multilayer film and method to reuse the substrate by delaminating a porous layer

The present invention is a method of producing an annealed wafer wherein a silicon single crystal wafer having a diameter of 200 mm or more produced by the Czochralski (CZ) method is subjected to a high temperature heat treatment in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereof at a temperature of 1100&#x2013;1350&#xb0; C. for 10&#x2013;600 minutes, and before the high temperature heat treatmen, a pre-annealing is performed at a temperature less than the temperature of the high temperature heat treatment, so that the growth of slip dislocations is suppressed by growing oxide precipitates. Thereby, there is provided a method of producing an annealed wafer wherein the generation and growth of slip dislocations generated in a high temperature heat treatment are suppressed and the defect density in the wafer surface layer is lowered even in the case of a silicon single crystal wafer having a large diameter of 200 mm or more, and the annealed wafer.

Method of producing annealed wafer and annealed wafer

The present invention provides method of producing an annealed wafer wherein a silicon single crystal wafer produced by the Czochralski (CZ) method is subjected to a high temperature annealing in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereof at a temperature of 1100&#x2013;1350&#xb0; C. for 10&#x2013;600 minutes, during the annealing the silicon single crystal wafer is supported by a supporting jig only in a central side region of the wafer except for 5 mm or more from a peripheral end of the wafer, and before performing the high temperature annealing, a pre-annealing is performed at a temperature less than the temperature of the high temperature annealing to grow oxide precipitates. Thereby, there is provided a method of producing an annealed wafer wherein slip dislocations generated in a high temperature annealing can be suppressed even in the case of a silicon single crystal wafer having a large diameter of 300 mm or more, and provided the annealed wafer.

The present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 &#x3a9;&#xb7;cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less, and a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 &#x3a9;&#xb7;cm or more and an initial interstitial oxygen concentration of 8 ppma or less and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment to form an oxide precipitate layer in a bulk portion of the wafer, as well as silicon wafers produced by these production methods. Thus, there is provided a DZ-IG silicon wafer in which a DZ layer of high quality is formed, and which can maintain high resistivity even if the wafer is subjected to a heat treatment for device production.

Method of producing silicon wafer and silicon wafer

The present invention provides a silicon wafer having a DZ layer near a surface and an oxide precipitate layer in a bulk portion, wherein interstitial oxygen concentrations of the DZ layer, the oxide precipitate layer and a transition region between the DZ layer and the oxide precipitate layer are all 8 ppma or less, and an epitaxial silicon wafer, wherein an epitaxial layer is formed on a surface of the silicon wafer, as well as a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a first heat treatment at 950 to 1050&#xb0; C. for 2 to 5 hours, a second heat treatment at 450 to 550&#xb0; C. for 4 to 10 hours, a third heat treatment at 750 to 850&#xb0; C. for 2 to 8 hours, and a fourth heat treatment at 950 to 1100&#xb0; C. for 8 to 24 hours. Thus, there is provided a method for producing a silicon wafer of which high resistivity can surely be maintained even when the wafer is subjected to a heat treatment for device production.

Silicon wafer and silicon epitaxial wafer and production methods therefor

The present invention provides an annealed wafer manufacturing method using a heat treatment method causing no change in resistivity of a wafer surface even when a silicon wafer having boron deposited on a surface thereof from an environment is subjected to heat treatment in an insert gas atmosphere and enabling the heat treatment in an ordinary diffusion furnace not requiring a sealed structure for increasing airtightness nor any specific facility such as explosion-proof facility. The present invention also provides an annealed wafer in which a boron concentration in the vicinity of a surface thereof is constant and crystal defects are annihilated. In the annealed wafer manufacturing method, a silicon wafer having a natural oxide film formed on a surface thereof with boron deposited thereon from an environment is subjected to heat treatment in an atmosphere containing hydrogen gas to remove the deposited boron before the natural oxide film is removed, and then is subjected to heat treatment in an inert gas atmosphere.

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Gunma, Japan

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