Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Chun Yen

Li-Jui Chen

Shang-Chieh Chien

Sheng-Kang Yu

Po-Chung Cheng

Chi Ming Yang

Heng-Hsin Liu

Yu-Chih Chen

Ming-Hsun Tsai

Yu-Huan Chen

Wei-Shin Cheng

Cheng-Hsuan Wu

Cheng-Hao Lai

Yu-Kuang Sun

Yu-Fa Lo

Chiao-Hua Cheng

An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.

EUV radiation source apparatus for lithography

In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.

Lithography apparatus and method

In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.

Inspection tool for an extreme ultraviolet radiation source to observe tin residual

A method includes generating a plasma that emits a first EUV radiation in a vessel at a first gas exhaust rate of the vessel; directing the first EUV radiation to a first substrate using a collector in the vessel; halting the generating of the first EUV radiation; and ejecting a gas past the collector at a second gas exhaust rate of the vessel, in which the second gas exhaust rate is greater than the first gas exhaust rate after the halting.

Lithography system and method thereof

The EUV radiation source includes a rotatable EUV source vessel configured to collect fuel debris generated from the collision of fuel droplets and a laser beam. The source vessel includes an inner surface for receiving the fuel debris, an first aperture at one end of the inner surface, and a heater adjacent to the inner surface and configured to generate a heating area on the inner surface in coordination with a rotation speed of the source vessel. The fuel debris is reflowed to the heating area. A method for generating EUV radiation includes collecting fuel debris on an inner surface of a source vessel, rotating the source vessel at a rotation speed, and heating a portion of the source vessel to an elevated temperature to generate a heating area on the inner surface in coordination with the rotation speed. The fuel debris is reflowed to the heating area.

Extreme ultraviolet (EUV) radiation source and a method for generating extreme ultraviolet radiation

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Hsinchu, Taiwan

Wei-Chun Yen