International Business Machines Corporation

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Clariant Finance (Bvi) Limited

Siemens Aktiengesell Schaft

Lnternational Business Machines Corporation

Wayne Martin Moreau

John Patrick Simons

Kenneth John McCullough

Charles Jesse Taft

John Michael Cotte

Marie Angelopoulos

Wu-Song S Huang

Keith Randal Pope

David Robert Medeiros

Karen Elizabeth Petrillo

Robert Lavin Wood

Dario Leonardo Goldfarb

Kevin Michael Welsh

James Thomas Fahey

Ranee W Kwong

Leo L Linehan

Robert Neal Lang

Christopher F Lyons

Gary T Spinillo

Qinghuang Lin

Ratnam Sooriyakumaran

Richard Paul Volant

Christopher John Knors

Randolph J Smith

Ari Aviram

William R Brunsvold

Willard E Conley

Elwood Herbert Macy

Edward Gipstein

Katherina E Babich

Ahmad D Katnani

Omar U Need, Iii

Melvin W Montgomery

Pamela E Jones

Hiroshi Ito

Gregory Breyta

Kuang-Jung Chen

Robert J Purtell

C Richard Guarnieri

Premlatha J Jagannathan

Brian Wayne Herbst

Douglas Charles LaTulipe

Jesse Stephen Jur

James Patrick Collins

Kevin Shawn Petrarca

Kim Yang Lee

Dirk Pfeiffer

Stephen L Buchwalter

Sushumna Iruvanti

Frank Louis Pompeo

Niranjan Mohanlal Patel

Anson Jay Call

Arpan Pravin Mahorowala

David Earle Seeger

Harbans S Sachdev

Wenjie Li

Edward D Babich

Daniel Joseph Dawson

Herman Russell Wendt

William Alfred Syverson

Ronald Anthony DellaGuardia

Ranee Wai-Ling Kwong

Matteo Flotta

James J Bucchignano

Christopher Karl Magg

Inna V Babich

George J Hefferon

Kaolin N Chiong

Ming-Fea Chow

Robert R Dichiara

Stanley J Jasne

Laird Chandler MacDowell

David Paul Merritt

Steve S Miura

Arpan P Mahorowila

Michael Santarelli

Judy B Dorn

Paul Anthony Zucco

Steven J Holmes

Katherine Lynn Saenger

Christopher Vincent Jahnes

Robert David Allen

James F Cameron

James W Thackeray

Satyanarayana Venkata Nitta

Gregory Michael Wallraff

Phillip Joe Brock

Michael Straight Hibbs

Burton Jesse Carpenter

Christopher Frederick Robinson

George W Orsula

Margaret C Lawson

William D Hinsberg, Iii

Zhijian Lu

Logan L Simpson

Mark S Chace

James Michael Mori

Edward C Fredericks

George M Jordhamo

Joseph LaTorre

A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

Apparatus and method for the rapid thermal control of a work piece in liquid or supercritical fluid

Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.

Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.

Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof

A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.

Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer

A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.

Dielectric material

Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials. These underlayer films include the group consisting of novolac based resists whose processing conditions are controlled, polyarylsulfones such as the BARL material, polyhydroxystyrene based derivatives, an example being a copolymer of polyhydroxystyrene and polyhydroxystyrene reacted with anthracenemethanol that contains a cross-linker, and acid catalyst (thermal acid generator), polyimides, polyethers in particular polyarylene ethers, polyarylenesulfides, polycarbonates such as polyarylenecarbonates, epoxies, epoxyacrylates, polyarylenes such as polyphenylenes, polyarylenevinylenes such as polyphenylenevinylenes, polyvinylcarbazole, cyclicolefins, and polyesters. Such films have index of refraction and extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6 at UV and DUV wavelengths, in particular 365, 248, 193 and 157 nm and EUV. Moreover, underlayer films produced in the present invention do not interact with the resist limiting interfacial mixing and contamination of resist by an outgassing product. The bilayer and TSI resist structures can be used for 248, 193, 157, EUV, x-ray, e-beam, and ion beam technology.

A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface is contacted with the composition under thermodynamic conditions consistent with the retention of the liquid or supercritical carbon dioxide in the liquid or supercritical state.

Process of removing residue from a precision surface using liquid or supercritical carbon dioxide composition

The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

High sensitivity resist compositions for electron-based lithography

A method for cleaning a semiconductor structure including providing a chamber for holding the semiconductor structure and a dense phase fluid, providing a thermal transfer device having a thermal transfer surface, connecting the thermal transfer device to the chamber, placing the semiconductor structure in the chamber in contact with the thermal transfer surface and thermally cycling the thermal transfer surface.

Method for the rapid thermal control of a work piece in liquid or supercritical fluid

Antireflective compositions characterized by the presence of an Si-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.

Silicon-containing compositions for spin-on arc/hardmask materials

Silicon-containing compositions for spin-on ARC/hardmask materials

The present invention includes a packaged coated workpiece. The packaged coated workpiece has: (1) a workpiece coated with a resist film sensitive to optical radiation, particulates or chemical contaminants; (2) an inner barrier sealed to enclose the coated workpiece and optionally a first getter agent, to produce a sealed first enclosure; and (3) an outer barrier sealed to enclose the sealed first enclosure and optionally a second getter agent, provided that the packaged coated workpiece has at least one getter agent, to produce a packaged coated workpiece suitable for storage for a period of at least one week without substantial loss of sensitivity, resolution or performance. The present invention also includes a process for preparing a packaged coated workpiece and a method of increasing the storage time of a coated workpiece to at least one week without substantial loss of sensitivity, resolution or performance.

Method of making a packaged radiation sensitive resist film-coated workpiece

Methods are provided for making microfilters by subtractive techniques which remove a component or part of a filter material to form pores in the filter material and additive techniques which deposit a filter material onto a porous underlying substrate. All the methods employ a supercritical fluid or mixture which have very high solvency properties and low viscosity and COis the preferred supercritical fluid.

Method to build a microfilter

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Wappingers Falls, NY, United States of America

Wayne Martin Moreau