Tokyo Electron Limited

Wataru Yoshikawa

Naoki Matsumoto

Jun Yoshikawa

Kazuki Moyama

Osamu Morita

Kiyotaka Ishibashi

Takehiro Tanikawa

Nobuyuki Okayama

Naoki Mihara

Kazuyuki Kato

Kenji Sudou

Yasuhiro Otsuka

Yasuhiro Seo

A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.

Manufacturing method of sample table

A plasma processing apparatus includes a slot plate of an antenna and the slot plate has slots arranged in a circumferential direction thereof with respect to an axis line. A microwave is introduced into a processing space from the antenna via a dielectric window, and a through hole is formed in the dielectric window along the axis line. A plasma processing method performed in the plasma processing apparatus includes performing a first cleaning process by radiating the microwave from the antenna and supplying a cleaning gas from a cleaning gas supply system; and performing a second cleaning process by radiating the microwave from the antenna and supplying the cleaning gas from the cleaning gas supply system. A first pressure of the processing space in the performing of the first cleaning process is set to be lower than a second pressure thereof in the performing of the second cleaning process.

Plasma processing method and plasma processing apparatus

An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window; and a slot plate, provided on one side of the dielectric window, having a plurality of slots. The dielectric windowhas a flat surfacesurrounded by a ring-shaped first recess; and a plurality of second recessesformed on the flat surfaceso as to surround a center of the flat surface. Here, the flat surfaceis formed on the other side of the dielectric window. When viewed from a thickness direction of the slot plate, a center of each second recessis located within each slotof the slot plate.

Antenna, dielectric window, plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

Plasma processing apparatus

In a dielectric windowfor a plasma processing apparatus, a first dielectric window recessis formed on an outer region of a surface of the dielectric windowin a diametrical direction of the dielectric windowat a side where plasma is generated, and the first dielectric window recessis extended in a ring shape and has a tapered shape inwardly in a thickness direction of the dielectric window. A multiple number of second dielectric window recessestoare formed between the center of the dielectric windowand the first dielectric window recess, and each of the second dielectric window recessestois recessed inwardly in the thickness direction of the dielectric windowfrom the surface of the dielectric window

Dielectric window for plasma processing apparatus, plasma processing apparatus and method for mounting dielectric window for plasma processing apparatus

A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed.

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Miyagi, Japan

Wataru Yoshikawa