Tokyo Electron Limited

Wataru Kume

Eiichi Nishimura

Masato Kushibiki

Fumiko Yamashita

Takashi Sone

Daisuke Urayama

Nao Koizumi

A plasma processing method of etching a multilayered material having a structure where a first magnetic layerand a second magnetic layerare stacked with an insulating layertherebetween is performed by a plasma processing apparatusincluding a processing chamberwhere a processing space S is formed; and a gas supply unitof supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl, and the second processing gas contains H.

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Beaverton, OR, United States of America

Wataru Kume