Speedfam Corporation

Speedfam-Ipec Corporation

Warren Lin

Paul L Holzapfel

Robert F Allen

Anthony L Bartels

Chris E Karlsrud

James Schlueter

A method for detecting the presence of a workpiece on a polishing pad of a chemical mechanical polishing (CMP) machine applies an optical interrogation signal to a workpiece during the CMP process. An optical probe assembly produces a light signal that communicates with the polishing pad; portions of the light signal reflect from the polishing pad in a scattered manner. A light receptor receives reflected light associated with the interrogation signal, and the characteristics of the received light are analyzed and processed by a suitable processor. By analyzing the scattered light signals, the method distinguishes the reflective characteristics of the polishing pad from the reflective characteristics of the workpiece. Thus, the method may be used to detect a lost or broken workpiece in a fast and effective manner.

Methods for the in-process detection of workpieces in a CMP environment

A method for use with a chemical mechanical planarization (CMP) system includes an infrared LED emitter that generates an interrogation signal and directs the interrogation signal toward a polishing pad configured to process a workpiece during the CMP procedure. A reflected signal produced in response to the interrogation signal is received by a detector, and the reflected signal is processed by a converter to produce a control signal having an analog voltage. The control signal is processed and an output is produced indicative of the presence of extraneous material proximate an area of the polishing pad when the analog voltage is measured within a predetermined range. The predetermined voltage range is established such that a variety of polishing pads having different physical characteristics may be employed without altering the position of the emitter or the operating parameters of the apparatus.

Methods for the in-process detection of workpieces with a monochromatic

The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a work piece, e.g., a semiconductor wafer. A probe is disposed proximate to the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A nozzle may be provided to apply a stream of compressed air at the disk surface under inspection to thereby remove excess slurry from the local region of the workpiece being inspected. A broad band light source is employed in conjunction with a fiber optic cable to direct light at the wafer surface. A bifurcated probe is employed such that the light applied to the workpiece surface is reflected back to and captured by a corresponding optical sensor connected to a fiber optic cable. The captured reflected light received by the receptor sensor and fiber optic cable assembly is applied to a photospectrum meter which analyzes the reflected light. An output signal from the photospectrum meter is transmitted to a processor which includes a smart algorithm configured to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Methods and apparatus for detecting removal of thin film layers during

An apparatus for use with a chemical mechanical planarization (CMP) system includes an infrared LED emitter that generates an interrogation signal and directs the interrogation signal toward a polishing pad configured to process a workpiece during the CMP procedure. A reflected signal produced in response to the interrogation signal is received by a detector, and the reflected signal is processed by a converter to produce a control signal having an analog voltage. The control signal is processed and an output is produced indicative of the presence of extraneous material proximate an area of the polishing pad when the analog voltage is measured within a predetermined range. The predetermined voltage range is established such that a variety of polishing pads having different physical characteristics may be employed without altering the position of the emitter or the operating parameters of the apparatus.

Apparatus for the in-process detection of workpieces with a

An apparatus for detecting the presence of a workpiece on a polishing pad of a chemical mechanical polishing (CMP) machine employs an optical interrogation signal that is applied during the CMP process. An optical probe assembly produces a light signal that communicates with the polishing pad; portions of the light signal reflect from the polishing pad in a scattered manner. A light receptor receives reflected light associated with the interrogation signal, and the characteristics of the received light are analyzed and processed by a processor used by the apparatus. By analyzing the scattered light signals, the apparatus distinguishes the reflective characteristics of the polishing pad from the reflective characteristics of the workpiece. Thus, the apparatus is capable of detecting a lost or broken workpiece in a fast and effective manner.

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Fremont, CA, United States of America

Warren Lin