Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Wanjuan Zhang

Yibin Huang

Feng Bai

Fan Zhang

Yao Xu

Yingfang Wang

A method for correcting mask patterns includes providing a target layout, including a plurality of main patterns; dividing the target layout into a plurality of first regions along a first direction; acquiring position information of each first region of the plurality of first regions; acquiring a first model of each first region according to the position information of the first region; acquiring pattern parameters of auxiliary patterns around each main pattern of the first region; and arranging, around each main pattern, the auxiliary patterns of the main pattern according to the pattern parameters of the auxiliary patterns.

Mask and method for correcting mask patterns

Embodiments and implementations of the present disclosure provide assistant pattern configuration methods, masks and forming methods thereof, and related devices. One form of a configuration method includes: providing a main pattern having an edge extending along a first direction, where a second direction is perpendicular to the first direction, the main pattern having a first optimal focal plane in the first direction and a second optimal focal plane in the second direction when exposed, and where there is an optimal focal plane offset between the first optimal focal plane and the second optimal focal plane; providing an initial assistant pattern around the main pattern; extracting a configuration parameter of the initial assistant pattern, the configuration parameter corresponding to the optimal focal plane offset; obtaining configuration information corresponding to a preset optimal focal plane offset based on an adjustment of the configuration parameter; and configuring an assistant pattern around the main pattern according to the configuration information. Embodiments and implementations of the present disclosure can improve lithographic quality.

Assistant pattern configuration method, mask and forming method thereof, and related device

A method of testing a scattering bar by simulation includes preparing an OPC mask model including a main pattern and a scattering bar pattern, forming a scattering bar OPC model by adjusting an image plane of the OPC mask model located at a middle portion of a photoresist layer to a top portion of the photoresist layer, simulating an exposure of the scattering bar OPC model, simulating a profile of the exposed scattering bar OPC model, and testing the simulated profile.

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Shanghai, China

Wanjuan Zhang