Tokyo Electron Limited

Wanjae Park

Masanobu Honda

Kandabara N Tapily

Yoshihide Kihara

Tadahiro Ishizaka

Kai-Hung Yu

Lior Huli

Soo Doo Chae

Shuhei Ogawa

Takeshi Itatani

Embodiments of methods for patterning using enhancement of surface adhesion are presented. In an embodiment, a method for patterning using enhancement of surface adhesion may include providing an input substrate with an anti-reflective coating layer and an underlying layer. Such a method may also include performing a surface adhesion modification process on the substrate, the surface adhesion modification process utilizing a plasma treatment configured to increase an adhesion property of an anti-reflective coating layer without affecting downstream processes. In an embodiment, the method may also include performing a photoresist coating process, a mask exposure process, and a developing process to generate a target patterned structure in a photoresist layer on the substrate. In such embodiments, the method may include controlling operating parameters of the surface adhesion modification process to achieve target profiles of the patterned structure and substrate throughput objectives.

Plasma treatment method to enhance surface adhesion for lithography

A plasma processing method of processing a processing target object, in which an organic film, a mask film and a resist film are stacked in sequence, by plasma includes a process of supplying a modifying gas, which is a Hgas, a hydrogen halide gas, or a mixed gas containing a rare gas and a Hgas or a hydrogen halide gas, into a chamber accommodating therein the processing target object in which a preset pattern is formed on the resist film; and modifying process of modifying the resist film of the processing target object by plasma of the modifying gas at a processing temperature equal to or less than &#x2212;20&#xb0; C.

Plasma processing method

A removal method is provided for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber. The removal method includes repeatedly performing process steps of exposing the plurality of types of metal oxide films to BClgas or a BClgas plasma generated by introducing BClgas, stopping introduction of the BClgas and performing a purge process, exposing the plurality of types of metal oxide films and/or a plurality of types of metal films underneath the metal oxide films to one or more different plasmas, at least one of which is generated by introducing a single gas of an inert gas, and stopping introduction of the inert gas and performing the purge process.

Removal method and processing method

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Albany, NY, United States of America

Wanjae Park