Asm IP Holding B.v.

Wangyu Lim

YoungJae Kim

Shinya Ueda

SeokJae Oh

HeeSung Kang

JaeOk Ko

Sunja Kim

HyounMo Choi

JaeBin Ahn

HyunGyu Jang

Heesung Kang

A substrate processing method of forming an air gap includes: forming deposition inhibitor sites in a lower space between a first protrusion and a second protrusion; and forming film-forming sites and an interlayer insulating layer on the first protrusion and the second protrusion, wherein the interlayer insulating layer is selectively formed in an upper space between the first protrusion and the second protrusion by the deposition inhibitor sites and the film-forming layer, and thus an air gap is formed between the first protrusion and the second protrusion.

Semiconductor processing method

A method and system for forming a film on a substrate are disclosed. Exemplary methods include using a first plasma condition to form a layer of deposited material having a good film thickness uniformity, using a second plasma condition to treat the deposited material and thereby form treated material, and using a third plasma condition to form a surface-modified layer—e.g., reactive sites on the treated material.

Thin-film deposition method and system

Growing community of inventors

Hwaseong-si, South Korea

Wangyu Lim