Intel Corporation

Shipley Company LLC

Rohm & Haas Electronic Materials LLC

Wang Yueh

George G Barclay

Heidi B Cao

Zhibiao Mao

Peter Trefonas, Iii

Charles R Szmanda

Huey-Chiang Liou

Ernisse S Putna

Joseph Mattia

Manish Chandhok

Gary Ganghui Teng

Anthony Zampini

Ashish A Pandya

Robert P Meagley

Stefan J Caporale

Hok-Kin Choi

Hai Deng

James S Clarke

Jeanette M Roberts

Shan Christopher Clark

Kim-Khanh Ho

Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.

Methods and compositions for reducing line wide roughness

The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Phenolic/alicyclic copolymers and photoresists

Embodiments of the invention provide methods and compositions for providing photoresists with improved liquid-contact properties. For one embodiment of the invention, a photoresist is provided having one or more constituent components that are resistant to diffusion between the photoresist and an index-matching liquid (IML). For such an embodiment in which the IML is water, a photoresist component is provided that is hydrophobic thus reducing diffusion between the photoresist and the water. In various alternative embodiments of the invention, a photoresist is provided having one or more constituent components that encourage diffusion between the photoresist layer and the IML in such manner as to impart beneficial liquid-contact properties to the photoresist layer. For such an embodiment in which the IML is water, a photoresist is provided having one or more hydrophilic constituents.

Methods and compositions for providing photoresist with improved properties for contacting liquids

A modified EUV photoresist and a method of making the resist. The modified resist includes an EUV photoresist and a LAM incorporated into the EUV photoresist.

Method of reducing sensitivity of EUV photoresists to out-of-band radiation and EUV photoresists formed according to the method

A series structure of a chemically amplified negative tone photoresist that is not based on cross-linking chemistry is herein described. The photoresist may comprise: a first aromatic structure copolymerized with a cycloolefin, wherein the cycloolefin is functionalized with a di-ol. The photoresist may also include a photo acid generator (PAG). When at least a portion of the negative tone photoresist is exposed to light (EUV or UV radiation), the PAG releases an acid, which reacts with the functionalized di-ol to rearrange into a ketone or aldehyde. Then new ketone or aldehyde is less soluble in developer solution, resulting in a negative tone photoresist.

Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists

Chemically amplified photoresists with reduced outgassing or no outgassing may be used in a vacuum environment of a lithography tool, such as an extreme ultraviolet lithography tool. A chemically amplified photoresist has a photoacid generator molecule. When the photoacid generator is irradiated, an acid is generated. The acid reacts with a protecting group in the photoresist to form an open-ring structure with reduced outgassing or no outgassing.

Photoresists with reduced outgassing for extreme ultraviolet lithography

A basic developer/quencher solution formulated to include at least one supercritical fluid or liquid solvent and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The supercritical fluid or liquid solvent may be carbon dioxide and the base may be quaternary ammonium salt that has side groups that increase the solubility of the quaternary ammonium salt in carbon dioxide.

Basic quencher/developer solutions for photoresists

Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100&#xb0; C., and the separated branched polymers are too large to outgass from the photoresist layer.

Non-outgassing low activation energy resist

A compound including a polymeric chain, and an acid labile group attached to the polymeric chain at an anhydride linkage is disclosed. Compositions including the compound, and methods of using the compositions are also disclosed.

Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages

A compound including a polymeric chain, an acid labile group attached to the polymeric chain, and at least one hydrophilic group attached to the acid labile group is disclosed. Compositions including the compound, and methods of using the compositions are also disclosed.

Resist compounds including acid labile groups having hydrophilic groups attached thereto

A method of forming an opening in a disclosed ILD is described. The ILD in one embodiment includes a matrix material and a photosensitive porogen. Hard sidewalls are formed in the ILD allowing a thin barrier layer to be used in a dual damascene copper and porous low-k without pore sealing steps.

Method for forming an opening for an interconnect structure in a dielectric layer having a photosensitive material

Disclosed are spirocyclic olefin polymers, methods of preparing spirocyclic olefin polymers, photresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.

Polymer and photoresist compositions

The invention includes polymers that contain a heterocyclic ring, preferably an oxygen- or sulfur-containing ring. The heterocyclic ring is preferably fused to the polymer backbone. The invention also provides photoresists that contain such polymers, particularly for imaging at short wavelengths such as sub-200 nm.

Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same

The present invention provides novel alicyclic-esterified norbornene carboxylates monomers, polymers and photoresist compositions that comprise the polymers as a resin binder component. Methods for synthesis of the monomers and polymers of the invention are also provided. The photoresist compositions of the invention can provide highly resolved relief images upon exposure to short wavelengths, including sub-300 and sub-200 nm wavelengths such as 193 nm and 157 nm.

Monomers, polymers, methods of synthesis thereof and photoresist compositions

In one embodiment, a photoactive compound may be attached to a polymer backbone. This embodiment may be more resistant to the generation of reactive outgassing components and may exhibit better contrast.

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Portland, OR, United States of America

Wang Yueh