United Microelectronics Corp.

Wan-Jeng Lin

Tzung Han Lee

Yung-Chung Lin

Jen-Hung Larn

A polysilicon layer is formed on a semiconductor substrate followed by performing a collimator physical vapor deposition (PVD) process to form a titanium nitride layer on the polysilicon layer. A rapid thermal nitridation (RTN) process is then performed to tighten the structure of the titanium nitride layer. Finally, a silicide layer is formed on the barrier layer. By using the titanium nitride layer, the interface between the silicide layer and the polysilicon layer is effective prevented from occurring a spike.

Growing community of inventors

Taipei Hsien, Taiwan

Wan-Jeng Lin