International Business Machines Corporation

Walter W Molzen, Jr

Jerome J Cuomo

Robert B Laibowitz

Alec N Broers

Arthur R Zingher

Raman Gobichettipalayam Viswanathan

Stephen A Rishton

Dieter P Kern

Michael G Rosenfield

Tai-Hon P Chang

Fritz-Jurgen Hohn

Philip J Coane

Porter Dean Gerber

Christopher J Ashton

A proximity effect correction method for electron beam lithography suitable for high voltages and/or very dense patterns applies both backscatter and forward scatter dose corrections. Backscatter dose corrections are determined by computing two matrices, a 'Proximity Matrix' P and a 'Fractional Density Matrix' F. The Proximity Matrix P is computed using known algorithms. The elements of the Fractional Density Matrix are the fractional shape coverage in a mesh of square cells which is superimposed on a pattern of interest. Then, a Dose Correction Matrix D is computed by convolving the P and F matrices. The final backscatter dose corrections are assigned to each shape either as area-weighted averages of the D matrix elements for all cells spanned by the shape, or by polynomial or other interpolation of the dose correction field defined by the D matrix. The D matrix also provides a basis for automatic shape fracturing for optimal proximity correction. Optionally, forward scattering correction may be included in the correction process. Forward scattering correction consists of boosting the dose applied to shape i by a factor b.sub.i. These boost factors are computed in a separate and independent step which considers only forward scattering. They are combined with those resulting from the backscatter correction scheme either by simple multiplication to form the final correction factors, or by inputting them to the backscatter correction scheme as numerical weights for each shape.

Method for correcting proximity effects in electron beam lithography

Apparatus and methods are disclosed for inspecting unsintered single or multiple layer ceramic specimens containing or carrying metal paste patterns of the type commonly used to ultimately form laminated multilayer ceramic (MLC) carriers for large scale integrated (LSI) chips. A relatively large surface area of an unsintered ceramic specimen (large in comparison with the minimum feature size of the paste patterns) is temporarily electrically contacted with a conforming electrode. The conforming electrode makes non-damaging electrical contact to any metallic paste exposed at the contacted area. Electric charge is either collected or delivered by this electrode, depending upon the mode of operation. The electrical continuity of metallic paste paths which contact the electrode and extend through the unfired ceramic specimen to surface positions not contacted by the electrode are tested either by delivering electric charge to the other surface locations and correlating therewith the collection of charge by the electrode, or by delivering charge by the electrode to all paste paths in contact therewith and detecting the presence of charge at the other surface locations. A preferred method either for delivering charge to such other surface locations or for detecting charge at such other surface locations is by using an electron probe beam. Various embodiments for the conforming electrode are described.

Inspection of unsintered single layer or multilayer ceramics using a

Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support.

Sub-100A range line width pattern fabrication

Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support. The resist is for example a contamination film from a vacuum pump oil used in evacuating the apparatus used to perform the process, e.g. silicone oil.

Sub 100A range line width pattern fabrication

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Patterson, NY, United States of America

Walter W Molzen, Jr