U.S. Philips Corporation

Walter Steinmaier

Claude J Le Can

Else Kooi

A semiconductor device having a region of a first conductivity type, a semiconductor layer present thereon, a buried layer of the second conductivity type provided locally between the said layer and the region, a buried layer of the first conductivity type provided on said buried layer and an inset pattern of an insulating material which adjoins the buried layer of the second conductivity type and surrounds two islands of the semiconductor layer connected by the buried layer of the first conductivity type in one of which a semiconductor circuit element is provided which is contacted via the other island. Suited in particular for integration of insulated complementary transistor pairs.

Semiconductor device with isolated circuit elements and method of making

A method of manufacturing a semiconductor device having an insulated gate field effect transistor in which a second region of the second conductivity type is indiffused in a first region of the first conductivity type and source and drain zones of the first conductivity type are provided in said second region. According to the invention, after the indiffusion, the doping material of the second region is outdiffused in an atmosphere of reduced pressure, preferably in a vacuum, in which a zone of maximum doping concentration is formed which may advantageously be used as a channel stopper and the source and drain zones are provided in the part of the second region having a doping concentration which increases from the surface. The method is preferably used for the manufacture of structures having complementary field effect transistors.

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Nijmegen, Netherlands

Walter Steinmaier