Materials Research Corporation

Walter H Class

Steven D Hurwitt

Michael L Hill

Robert G Hieronymi

Arnold J Aronson

Marvin K Hutt

George J Unterkofler

Lin I

A substrate support electrode for use in plasma processing equipment has a book-shaped prismatic body containing a magnet core with flange-like pole pieces at each end to provide a longitudinal magnetic field wrapped around the electrode body. An auxiliary field-shaping magnet spaced from a substrate support face of the electrode body, with each of its poles adjacent to the pole piece electrode body with each of its poles adjacent to the of like polarity of the electrode, flattens the magnetic field adjacent to the electrode support surface to produce a thin plasma of substantially uniform thickness close to the electrode surface.

Shaped field magnetron electrode

The film deposition rate of metallic compounds onto a substrate in a vacuum chamber by reactive sputtering or reactive ion plating is significantly increased by providing a substrate support with spaced apart magnetic poles to create a magnetic field having lines of force which leave the support, extend across a surface of the substrate exposed to a metallic coating source and re-enter the support to enclose the exposed surface in a localized magnetic electron-trapping field. A reactive gas is fed into the chamber, and a bias voltage is applied to the substrate support sufficient to create a dense glow discharge of ionized reactive gas closely adjacent to the substrate surface. The reactive gas ions react with metallic particles deposited on the exposed substrate surface from the coating source to form a film of the desired metallic compound. The localized magnetic plasma trap close to the substrate increases the chemical reaction rate at the substrate and reduces back sputtering, to result in a metallic compound coating having superior physical and chemical characteristics.

Magnetron reactive bias sputtering method and apparatus

A cathode assembly for use in a magnetron sputtering system, the system having a cathode assembly with parallel elongated target segments which are formed substantially of a material which is desired to be sputter-deposited onto a substrate. The elongated target segments are each provided with a material removal surface which is inclined toward the other segment with respect to the plane of the substrate. Such inclination permits the material which is removed from the target bars to be focused onto a relatively narrow area, thereby improving the efficiency of the sputtering operation and reducing machine down-time for cleaning and vacuum pumping. In other embodiments, end target segments are provided for improving the efficiency of film deposition near the ends of the elongated bars. The end target segments are provided with material removal surfaces which are also inclined, and connect with the elongated target segments to form a rectangular frame arrangement.

Focusing magnetron sputtering apparatus

A cathode assembly for use in a magnetron sputtering system, the system having a cathode assembly with parallel elongated target segments which are formed substantially of a material which is desired to be sputter-deposited onto a substrate. The elongated target segments are each provided with a material removal surface which is inclined toward the other segment with respect to the plane of the substrate. Such inclination permits the material which is removed from the target bars to be focused onto a relatively narrow area, thereby improving the efficiency of the sputtering operation and reducing machine down-time for cleaning and vacuum pumping. End target segments are provided for improving the efficiency of film deposition near the ends of the elongated bars. The end target segments are provided with material removal surfaces which are also inclined, and connect with the elongated target segments to form a rectangular frame arrangement. An elongated inner pole piece has outwardly extending portions near each end to improve uniformity of a trapping magnetic field between the inner pole piece and a rectangular annular outer pole piece.

Method and apparatus are disclosed for plasma treating a substrate in a hermetic chamber with a magnetic field having lines of force which leave a support, extend across the surface of the substrate and re-enter the support to enclose the substrate exposed surface in a magnetic electron-trapping field. The voltage applied to the substrate support is adjusted to produce a dense glow discharge closely adjacent the substrate surface for reacting chemically therewith.

Magnetically enhanced plasma process and apparatus

A magnetron cathode assembly for use in a cathode sputtering apparatus includes a support means for a rectangular frame-like annular target and spaced apart inner and outer pole pieces fastened to the support member and providing a rectangular annular channel for mounting the target in electrically and thermally conductive contact with the support means. Preferably, the target is a set of four straight bars shaped at the ends to assemble together as a rectangular frame. Target bars having a symmetrical hourglass cross section with overhanging flanged side portions adjacent to front and rear faces are adapted to be reversibly clamped to the support means by the inner and outer poles for simple and rapid replacement in the field, said hourglass shape providing maximum utilization of target material.

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Yonkers, NY, United States of America

Walter H Class