Aixtron Se

Aixtron Ag

Aixtron, Inc.

Walter Franken

Gerhard Karl Strauch

Johannes Käppeler

Holger Jurgensen

Gerd Strauch

Marcel Kollberg

Markus Gersdorff

Martin Freundt

Daniel Brien

Arno Offermanns

Bernhard Zintzen

Henricus Wilhelmus Aloysius Janssen

Roland Püsche

Florenz Kittel

A CVD or PVD coating device comprises a housing and a gas inlet organ secured to the housing via a retaining device, the gas inlet organ having a gas outlet surface with gas outlet openings. The retaining device is only secured at its horizontal edge to the housing so as to stabilize the retaining device with respect to deformations and temperature. The gas inlet organ is secured, at a plurality of suspension points, to the retaining device by means of a plurality of hanging elements distributed over the entire horizontal surface of the retaining device. The retaining device has mechanical stabilization elements formed by a retaining frame having vertical walls that are interconnected at vertical connection lines. An actively cooled heat shield is situated between the retaining device and the gas inlet organ.

CVD or PVD reactor for coating large-area substrates

A transport module for loading and unloading a process module of a semiconductor production device includes a housing, which has a chamber that can be evacuated. The chamber has an opening that can be closed in a gas-tight manner by a closure device, which opens out into a first coupling duct associated with the transport module. The first coupling duct is connected with a flange plate using an elastic intermediate element, wherein the flange plate can be seated in a plane parallel, sealing manner on a flange plate of a second coupling duct associated with the process module. After opening the closure device, an evacuated loading and unloading duct to the process module is created. An inner and outer mounting section of the intermediate element is spaced apart from one another in the radial direction, with respect to the axis of the first coupling duct, by a deformation zone.

Transport module for a semiconductor fabrication device or coupling device

The invention relates to a device for depositing laterally structured layers on a substrate () situated on a substrate support (), using a shadow mask () lying flat on the substrate surface (') to be coated, the substrate support () having first magnetic zones () for magnetically attracting second magnetic zones () of the shadow mask () that are associated with these first magnetic zones (), wherein, before coating the substrate () and when the shadow mask () is lying on the substrate (), the first magnetic zones () may be brought into an active position in which the second magnetic zones () are drawn toward the substrate surface (&#x2032;), and, for placement or removal of the shadow mask (), the first magnetic zones may be brought into an inactive position in which the attractive force acting on the second magnetic zones () is reduced. It is important that the first magnetic zones () are formed from magnetic elements, in particular permanent magnetic elements, situated in recesses () in a substrate support surface (&#x2032;) of the substrate support (), which are spatially associated with the second magnetic zones ().

Shadow mask held magnetically on a substrate support

The invention relates to a CVD reactor having a plurality of rotary tables () supported on a rotationally driven susceptor () on dynamic gas cushions (), wherein each gas cushion () is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device (), can be varied by an individual actuator (). The invention further comprises a carrier (), carrying the susceptor () and rotating with the susceptor (). A common gas supply line () ending in the carrier () is key to the invention and provides the actuators () arranged on the carrier () with the gas that forms the gas flow.

Device for the temperature control of the surface temperatures of substrates in a CVD reactor

A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum tight manner. The reaction chamber is further characterized by a combination of the following features: a support plate with coolant channels, and at least one opening for an HF line; an HF line collar in the zone disposed in the reaction chamber, a first seal on the collar; a first disc from an insulating material between a second seal on the support plate and the first seal on the collar; a thread in the zone outside the reaction chamber, a screw element being screwed onto the thread, all configured to prevent an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.

Reaction chamber with at least one HF feedthrough

Growing community of inventors

Eschweiler, Germany

Walter Franken