Tdk Corporation

Tokyo Institute of Technology

Wakiko Sato

Hitoshi Saita

Hiroki Uchiyama

Masahito Furukawa

Masamitsu Haemori

Saori Takahashi

Yusuke Sato

Hiroshi Funakubo

Nobuyuki Okuzawa

Shirou Ootsuki

Takaaki Morita

Junichi Yamazaki

Shota Suzuki

Takao Shimizu

Seiichi Tajima

Kumiko Yamazaki

Seiko Komatsu

Mirai Ishida

Daisuke Hirose

Miyu Hasegawa

Keisuke Ishihama

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction of a surface of the dielectric thin film.

Dielectric thin film, dielectric thin film element, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head and inkjet printer device

A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula ABON, (o+n)/a<3.00 is satisfied.

Dielectric thin film, capacitor element, and electronic circuit board

A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)Ois provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

Dielectric film, dielectric element, and electronic circuit board

A printed wiring board and the like in which local deviations of characteristics of a bamse member using a liquid crystal polymer are reduced. A printed wiring board uses a liquid crystal polymer having wiring formed on at least one surface as a bamse member, in which the bamse member has a degree of crystal orientation of the liquid crystal polymer of 0.3 or less in a plane direction.

Printed wiring board, multilayer printed wiring board and method for manufacturing printed wiring board

A dielectric composition including a complex oxide containing bismuth, zinc, and niobium, includes a crystal phase formed of the complex oxide and having a pyrochlore type crystal structure, and an amorphous phase. When the complex oxide is represented by a composition formula BiZnNbO, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20&#x2264;y&#x2264;0.50, and 2/3&#x2264;x/z&#x2264;3/2.

Dielectric composition and electronic component

A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)Oand satisfies at least one of degree of orientation of (100) plane&#x3e;degree of orientation of (110) plane and degree of orientation of (111) plane&#x3e;degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

Dielectric membrane and dielectric element

Growing community of inventors

Tokyo, Japan

Wakiko Sato