Tokyo Ohka Kogyo Co., Ltd.

Daito Chemix Corporation

Waki Ohkubo

Yusuke Nakagawa

Makiko Irie

Hiroto Yukawa

Yohei Kinoshita

Shinichi Hidesaka

Kouki Tamura

Kazuyuki Nitta

Satoshi Shimatani

Toshiharu Shimamaki

Kei Mori

A positive resist composition and method for forming a resist pattern are provided which enable a resist pattern with excellent shape to be obtained. The resist composition includes a resin component (A) which exhibits increased alkali solubility under action of acid, an acid-generator component (B) which generates acid upon irradiation and an organic solvent (S) in which the components (A) and (B) are dissolved, the resin component (A) including a copolymer (A1) containing: a structural unit (a1) having an acetal-type protected group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, which is represented by general formula (a2-1) shown below; and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group or a fluorinated lower alkyl group; R' represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and m represents 0 or 1.

Positive resist composition and method for forming resist pattern

The present invention is a positive resist composition and a resist pattern forming method including a resin component (A) which has a polymer compound (A1) having a structural units (a1) including an acetal type acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group, and an acid generator component (B) having an onium salt-based acid generator (B1) having a cation portion represented by a general formula (b-1) shown below [wherein, Rrepresents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; Rto Reach represents, independently, an aryl group or the alkyl group that may have substituent group; n' represents either 0 or an integer from 1 to 3].

Positive resist composition and resist pattern forming method

A positive resist composition capable of realizing an improvement in resolution, a reduction in LER, and a reduction in the level of defects, as well as a method of forming a resist pattern. This composition and method provide: (wherein in the general formulas (1) and (2), R represents a hydrogen atom or a methyl group).

Positive resist composition and method of forming resist pattern using same

Poly (disulfonyl diazomethane) compound and positive-working chemical-amplification photoresist composition containing the same

Disclosed is a poly(disulfonyl diazomethane) compound as a class of novel compounds represented by the general formula ##STR1## in which the subscript n is 1 to 5, each R is a monovalent hydrocarbon group and Z is a divalent hydrocarbon group. The invention also discloses a chemical-amplification positive-working photoresist composition which comprises the above mentioned poly(disulfonyl diazomethane) compound as the radiation-sensitive acid-generating agent in combination with a film-forming resin capable of being imparted with increased solubility in an aqueous alkaline solution by the interaction with an acid, such as a polyhydroxystyrene resin of which a part of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups, e.g., tert-butoxycarbonyl groups.

(Disulfonyl diazomethane compounds)

Growing community of inventors

Kawasaki, Japan

Waki Ohkubo