Tokyo Electron Limited

Wakako Naito

Koichiro Inazawa

Masaaki Hagihara

Shin Hirotsu

Yoshinori Suzuki

A plasma etching method for plasma-etching an anti-reflective coating formed on a target object includes the step of placing the target object into a processing chamber having a first electrode and a second electrode provided while facing each other, the target object including an etching target film, the anti-reflective coating and a patterned photoresist film sequentially formed in that order on a substrate. The plasma etching method further includes the steps of introducing a processing gas into the processing chamber; generating a plasma by applying a high frequency power to one of the first electrode and the second electrode; and applying a DC voltage to one of the first electrode and the second electrode.

Plasma etching method and computer readable storage medium

A processing gas constituted of CHF, Oand Ar is introduced into a processing chamberof a plasma processing apparatus. The flow rate ratio of the constituents of the processing gas is set at CHF/O/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamberis set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode.on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNlayerformed on a Cu layeris etched. The exposed Cu layeris hardly oxidized and C and F are not injected into it.

Etching method and plasma processing method

A processing gas constituted of CH F , O and Ar is introduced into a processing chamber of a plasma processing apparatus . The flow rate ratio of the constituents of the processing gas is set at CH F /O /Ar&equals;20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 Mz is applied to a lower electrode on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiN layer formed on a Cu layer is etched. The exposed Cu layer is hardly oxidized and C and F are not injected into it.

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Yamanashi, Japan

Wakako Naito