Novellus Systems Incorporated

Waikit Fung

Wenxian Zhu

Siswanto Sutanto

George D Papasouliotis

Jengyi Yu

Tze Wing Poon

Vishal Gauri

Michael Turner

Mayasari Lim

Pingsheng Sun

Jeffrey Chih-Hou Lowe

Oliver Graudejus

Doug Winandy

Biased plasma etch processes incorporating Hetch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

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Plasma etch processes incorporating etch chemistries which include hydrogen. In particular, high density plasma chemical vapor deposition-etch-deposition processes incorporating etch chemistries which include hydrogen that can effectively fill high aspect ratio (typically at least 3:1, for example 6:1, and up to 10:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps while reducing or eliminating chamber loading and redeposition and improving wafer-to-wafer uniformity relative to conventional deposition-etch-deposition processes which do not incorporate hydrogen in their etch chemistries.

Method for controlling etch process repeatability

A method for depositing a doped silicon dioxide layer is provided that allows the dopant concentration in the silicon dioxide layer to be controlled throughout the layer. By controlling the dopant concentration throughout the layer the etch profile of contact holes etched into the layer can be controlled and footing can be prevented or eliminated. During the deposition of the silicon dioxide, the amount of dopant is increased as the temperature of the wafer is increased and held constant while the temperature of the wafer is constant.

Phosphorous-doped silicon dioxide process to customize contact etch profiles

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Cupertino, CA, United States of America

Waikit Fung