Robert Boschgmbh

Volker Becker

Franz Laermer

Andrea Schilp

Holger Zimmermann

Klaus Breitschwerdt

Lothar Vogt

Dieter Baas

Thomas Beck

Thomas Westendorf

Michael Offenberg

Tino Fuchs

Christina Leinenbach

Anton Mindl

Andrea Urban

Ingo Hermanns

Jens Maier

Frank Koertje

Wilfried Repper

A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClFand/or ClF, a gas selected from the group including Cland/or HCl being added to the etching gas.

Method for etching a layer on a silicon semiconductor substrate

A method and a device suitable for implementing this method for etching a substrate (), a silicon body in particular, using an inductively coupled plasma () are proposed. For this purpose, a radio-frequency electromagnetic alternating field is generated with an ICP source (), the alternating field generating an inductively coupled plasma () of reactive particles in a reactor (). The inductively coupled plasma () arises by the action of the radio-frequency electromagnetic alternating field on a reactive gas. Furthermore, a device is provided with which a plasma power injected into the inductively coupled plasma () via the radio-frequency electromagnetic alternating field with the ICP source () is capable of being pulsed so that at least from time to time a pulsed radio-frequency power can be injected into the inductively coupled plasma () as a pulsed radio-frequency power. In addition, the pulsed plasma power can be combined or correlated with a pulsed magnetic field and/or a pulsed substrate electrode power.

Device and method for etching a substrate using an inductively coupled plasma

Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.

Method of etching structures into an etching body using a plasma

A drive for storage disc which permits a convenient means of loading and unloading the storage disc. The drive includes a loading device for transport of a storage disc into the drive, the loading device including a carrier for accommodating the storage disc. In a loading position, the carrier remains generally in the drive and, in the direction of an insertion opening of the drive, includes an opening for insertion of the storage disc.

Disc drive with carrier completely in the drive in a loading position and protruding out of the drive in an eject position

A method for the reproduction of data, such as digital audio data and/or video data, stored on a storage medium, for example, on an optical storage disk, in a playback device, in which an accelerated selection may be possible of storage media to be reproduced or to be rejected by playback device. In a first operating mode, data are filed in, for example, a nonvolatile memory during a play-back process of the storage medium. In a second operating mode, the storage medium is selected, for example, for a playback process and a reproduction process. Within a timespan during which the selected storage medium is brought from a magazine into a playback position, in which the data stored in the storage medium may be read out by a read device, or into an eject position, from which the selected storage medium may be retrieved, at least a part of the data filed in the memory is played back and reproduced.

Method of reproducing data in which an accelerated selection may be possible of storage media to be reproduced or to be rejected by a playback device

A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

Device and method for etching a substrate by using an inductively coupled plasma

A player for storage media having a number of data groups is provided, which player enables a data group to be selected in a clearly organized way, particularly when a large number of data groups is stored on such a storage medium. In this context, a read head is provided for reading out the data of a first storage medium, and a read-head control is provided for positioning the read head in the area of a data group to be played, which data group is stored on the first storage medium. In addition, an input unit is provided where, on the one hand, various storage media and, on the other hand, various data groups, are selectable on a selected storage medium to be played. A conversion device is provided, which, in response to the number of data groups on the first storage medium exceeding a predefined value, forms at least two subsets from the number of data groups of the first storage medium, each of these subsets at the input unit being selectable as a different storage medium. The conversion device drives the read-head control as a function of the subset selected as storage medium at the input unit, to position the read head.

Player for storage media

A method for performing a track skip and a playback device for optical storage disks enable an accelerated track skip in the case of a non-moving storage disk in which a time is determined for the track skip of a read device between a current track and a selected track of a storage disk inserted in the playback device, as a function of the tracks to be skipped in this instance, and the read device is moved in the direction of the selected track for the determined time. In response to a track skip request, the read device is moved in the direction of a lead-in area of the optical storage disk until a starting position is detected. The time necessary for the track skip from starting position to the selected track is determined from this track.

Method and a playback device for performing a track slip

A method is proposed for etching a first silicon layer () that is provided with an etching mask () for defining lateral recesses (). In a first plasma etching process, trenches () are produced in the region of the lateral recesses () by anisotropic etching. The first etching process comes virtually to a standstill as soon as a separating layer (), buried between the first silicon layer () and a further silicon layer (), is reached. This separating layer is thereupon etched through in exposed regions () by a second etching process. A subsequent third etching process then etches the further silicon layer (). In this manner, free-standing structures for sensor elements can be produced in a simple process which is completely compatible with the method steps in IC integration technology.

Method for processing silicon using etching processes

A method for providing user-friendly selection of a storage medium, in particular an optical storage disk, from a plurality of storage mediums. The storage mediums are assigned to a playback device, in particular a compact disk changer, for reading out and reproducing stored data and can be stored in a storage apparatus, arrangement or structure, in which a playback probability is determined for each storage medium, and in which the storage medium having the lowest playback probability is then released to be ejected from the playback device or from the storage apparatus, arrangement or structure.

Method for selecting a storage medium

A disk drive is described, having a draw-in device for disk-shaped storage media, which prevents damage to the playoff area of such storage media. The draw-in device includes a threaded rod having an axis of rotation in the push-in direction of the storage medium. The course of thread of threaded rod acts together with the edge region of a storage medium inserted into the draw-in device so that the storage medium is drawn into the disk drive or pushed out of the disk drive by the rotation of the threaded rod, depending on the direction of rotation.

Disk drive

A device and a method for determining the extent of an at least locally lateral undercut of a structured surface layer on a sacrificial layer. The structured surface layer for this purpose locally has at least one passive electronic component, using which a physical measured quantity can be determined, which is proportional to the extent of the lateral undercut. The method for generating this device proposes, initially on the structured surface layer in a first etching method, to provide the surface layer at least locally with a structuring having trenches and, in a second etching method, proceeding from the trenches, to undertake at least locally a lateral undercut of the structured surface layer. In this context, in the first etching method on the surface layer, locally at least one passive electronic component is additionally delineated out, which in response to a subsequent undercutting of the surface layer is also undercut. The physical measured quantity is determined without contact, preferably by sending an electromagnetic emission into the passive component.

Device and method for determining the lateral undercut of a structured surface layer

A method and a suitable device for carrying out this method is proposed, for etching a substrate (), especially a silicon element, with the aid of an inductively coupled plasma (). For this purpose, a high frequency electromagnetic alternating field is generated, which produces an inductively coupled plasma () from reactive particles in a reactor (). In this connection, the inductively coupled plasma () comes about by the action of the high frequency electromagnetic alternating field upon a reactive gas. Furthermore, a device, in particular a magnetic field coil () is provided which produces a static or timewise varying magnetic field between the substrate () and the ICP source (). For this, the magnetic field is oriented in such a way that its direction is at least approximately or predominantly parallel to the direction defined by the line connecting the substrate () and the inductively coupled plasma ().

A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate ( ), in particular, a patterned silicon body, with the assistance of a plasma ( ), is proposed. In the process, the plasma ( ) is produced by a plasma source ( ) to which a high-frequency generator ( ) is connected for applying a high-frequency power. Moreover, this high-frequency generator is in communication with a first means which periodically changes the high-frequency power applied to the plasma source ( ). Besides, provision is preferably made for a second means which adapts the output impedance of the high-frequency generator ( ) to the prevailing impedance of the plasma source ( ) which changes as a function of the high-frequency power. The proposed anisotropic etching method is carried out in separate and alternating etching and polymerization steps, a higher high-frequency power of up to 5000 watts being, at least temporarily, applied to the plasma source ( ) during the etching steps than during the deposition steps. The proposed device is also suitable for igniting a plasma ( ) and for adjusting upward or pulsing a plasma power from a starting value to up to 5000 watts.

DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAME UPWARDS

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Marxzell, Germany

Volker Becker