Samsung Electronics Co., Ltd.

Vladimir Volynets

Sang-jin An

Sang-Heon Lee

Gon-jun Kim

In-ho Choi

Won-taek Park

Xinglong Chen

Hee-jeon Yang

Yuri Barsukov

Sung-keun Cho

Sang Heon Lee

Sangheon Lee

Sung Ho Jang

Yuri Nikolaevich Tolmachev

Vasily Pashkovskiy

Young-eal Kim

Young Do Kim

Protopopov Vladimir

Yung Hee Lee

Dali Liu

Go-jun Kim

Andrey Ushakov

Won Ceak Pak

Beom-jin Yoo

Sung Chang Park

Shamik Patel

An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH, SiH, CHF, and CHFto a process chamber.

Etching method using remote plasma source, and method of fabricating semiconductor device including the etching method

A pulsed plasma analyzer includes a pulse modulator that controls an off-time of a pulsed plasma that includes a target radical, an optical spectrometer that measures optical emissions of the pulsed plasma after the off-time to determine optical emission data, and a concentration estimating module that estimates a concentration of the target radical during the off-time based on an initial optical emission value of the optical emission data that changes as a function of the off-time, and outputs an estimated concentration.

Pulsed plasma analyzer and method for analyzing the same

An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (HO) and the plasma to a process chamber.

Etching method using plasma, and method of fabricating semiconductor device including the etching method

An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

Apparatus and method to generate plasma

A plasma accelerator () is disclosed that has three separate sections of coils (-) disposed outside the plasma chamber (). The separate sections of coils include an initial discharge section (-), an acceleration section (-), and a nozzle section (-). Each section of coils is driven by signals of a different frequency to more efficiently discharge and accelerate a plasma in the plasma accelerator ().

Driving frequency modulation system and method for plasma accelerator

An electromagnetic induced accelerator based on coil-turn modulation, including inner and outer cylinders with different diameters, the cylinders being coaxially disposed to form a channel which is a spatial portion therebetween; a discharging coil wound spirally inward along the upper surface of the channel for generating plasma by inducing a magnetic field and secondary current in the channel; and inner and outer coils wound helically around along the inner surface of the inner cylinder and the outer surface of the outer cylinder in parallel with each other for accelerating plasma in the direction of a common axis of the inner and outer cylinders by offsetting the magnetic field induced in the direction of the axis.

Electromagnetic induced accelerator based on coil-turn modulation

Growing community of inventors

Suwon-si, South Korea

Vladimir Volynets