Technische Unversität Berlin

Technische Universitaet Berlin

Vladimir Gaysler

André Strittmatter

Jan-Hindrik Schulze

Tim David Germann

Andrei Schliwa

Udo W Pohl

Dieter Bimberg

Robert Seguin

Sven Rodt

Anatol Lochmann

A device including a locally modified buried first layer. A second layer is arranged on top of the first layer. The first layer includes at least one modified section and at least one unmodified section. The modified material of the locally modified buried first layer changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section. At least one nanostructure is placed on top of the second layer in an area, which is located above the at least one unmodified section of the first layer or adjacent thereto, said at least one nanostructure being formed by a strain-sensitive third material deposited on the locally strained second layer.

Layer assembly

In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting.

Single-photon source and method for the production and operation thereof

The invention inter alia relates to a method of fabricating a layer assembly comprising the steps of: arranging a first layer on top of a carrier; arranging a second layer on top of the first layer; locally modifying the material of the buried first layer and providing at least one modified section in the first layer, wherein the modified material changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section; after locally modifying the material of the buried first layer, depositing a third material on top of the second layer, at least one characteristic of the third material being sensitive to the local mechanical strain in the second layer.

Growing community of inventors

Novosibirsk, Russia

Vladimir Gaysler