At&t Bell Laboratories

American Telephone & Telegraph Co., At&t Bell Laboratories

Vivian W Ryan

Ronald J Schutz

Gerald Smolinsky

Stress induced grain boundary movement in aluminum lines used as connections in integrated circuits is substantially avoided by doping the aluminum with iron. Through this expedient not only is grain boundary movement avoided but electromigration problems are also decreased.

Aluminum metallization doped with iron and copper to prevent

Stress induced grain boundary movement in aluminum lines used as connections in integrated circuits is substantially avoided by doping the aluminum with iron. Through this expedient not only is grain boundary movemenmt avoided but electromigration problems are also decreased.

Aluminum metallization for semiconductor devices

A sol-gel process is utilized for producing silicon oxide glasses useful in the manufacture of devices such as semiconductor devices. These glasses are easily deposited by techniques such as spinning. Not only is the glass easily applied, but also has advantageous electrical, etching, and mechanical properties. Thus, these glasses are useful in applications such as passivating layers for integrated circuit devices and as intermediary layers in trilevel lithography for the production of such devices.

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Nutley, NJ, United States of America

Vivian W Ryan