American Air Liquide, Inc.

L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude

Air Liquide Electronics U.S. LP

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Tokyo Electron Limited

Airgas, Inc.

Vincent M Omarjee

Christian Dussarrat

Nathan Stafford

Rahul Gupta

Curtis Anderson

Venkateswara R Pallem

Peng Shen

Jean-Marc Girard

Nicolas Blasco

James Royer

Fabrizio Marchegiani

Clement Lansalot-Matras

Vijay Surla

Hui Sun

Robert Daniel Clark

Clément Lansalot-Matras

Tracey Jacksier

Glenn Kuchenbeiser

Cheng-Fang Hsiao

Andrey V Korolev

Steven Consiglio

Benjamin J Feist

Anthony W Reccek, Jr

Olivier Letessier

Mani C Matthew

Venkat Pallem

Martin Vasarhelyi

The disclosure relates to a manufactured composition, material or device comprising at least two different nonradioactive isotope atoms. Each nonradioactive isotope atom is present in an amount sufficient to increase the total amount of the nonradioactive isotope atom above the total amount found in the manufactured composition, material or device in the absence of adding the nonradioactive isotope atom to increase said total amount. The ratio(s) of the at least two nonradioactive isotopes in the manufactured composition, material or device are measurably different than the ratio(s) found in the manufactured composition, material or device in the absence of adding the nonradioactive isotope atom to increase said total amount.

Use of stable isotopes to prove authentication of manufacturing location

A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CHFI, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Iodine-containing compounds for etching semiconductor structures

Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Fluorocarbon molecules for high aspect ratio oxide etch

Replacement chemistries for the cCFpassivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CHF, with 1&#x2264;x&#x3c;7, 1&#x2264;y&#x2264;13, and 1&#x2264;z&#x2264;13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Chemistries for TSV/MEMS/power device etching

Replacement chemistries for the cCFpassivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CHF, with 1 &#x2266;x&#x3c;7, 1&#x2266;y&#x2266;13, and 1&#x2266;z&#x2266;13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).

Bis-ketoiminate copper precursors for deposition of copper-containing films and methods thereof

A method is provided for forming a nitrided high-k film in an atomic layer deposition process (ALD) process. The method includes receiving a substrate in a process chamber, maintaining the substrate at a temperature sufficient for ALD of a nitrided high-k film, and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a gas pulse comprising a metal-containing precursor, b) exposing the substrate to a gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a gas pulse comprising trisilylamine gas, where the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that includes nitrogen and that is substantially free of silicon, and repeating the gas pulse sequence. A trisilylamine gas exposure may also be used to nitride a deposited high-k film.

Nitridation of atomic layer deposited high-k dielectrics using trisilylamine

Disclosed are hafnium- and zirconium-containing precursors and methods of providing the same. The disclosed precursors include a ligand and at least one aliphatic group as substituent selected to have greater degrees of freedom than the usual substituents. The disclosed precursors may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.

Hafnium- and zirconium-containing precursors and methods of using the same

Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.

Alkali earth metal precursors for depositing calcium and strontium containing films

Disclosed are hafnium- or zirconium-containing compounds. The compounds may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. The hafnium- or zirconium-containing compounds include a ligand at least one aliphatic group as substituents selected to have greater degrees of freedom than the substituents disclosed in the prior art.

Methods of making and deposition methods using hafnium- or zirconium-containing compounds

The present invention provides molecules useful for aluminum implant in semiconductor materials. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.

Growing community of inventors

Grenoble, France

Vincent M Omarjee