Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Soitec

Freescale Semiconductor,inc.

Nxp Usa, Inc.

Vincent Larrey

Oleg Kononchuk

Shay Reboh

Frank Fournel

Bernard Diem

Laurent Clavelier

Emmanuel Defay

Audrey Berthelot

Jean-Philippe Polizzi

Christophe Morales

Francois Perruchot

François Perruchot

Marie-Hélène Vaudaine

Didier Landru

Philippe Robert

Umberto Rossini

Ludovic Ecarnot

Sylvain Maitrejean

Jean-Michel Hartmann

Hemant D Desai

Woo Tae Park

Laurent Vandroux

Sophie Giroud

François Rieutord

Thierry Flahaut

Marie-Helene Vaudaine

François-Xavier Darras

Gilles Despaux

Elodie Beche

Ali Dekious

Emmanuel Le Clezio

Marwan Tedjini

Emilie Deloffre

Oleg Kononchuck

Aziliz Calvez

A process for hydrophilic bonding first and second substrates, comprising: —bringing the first and second substrates into contact to form a bonding interface between main surfaces of the first and second substrates, and—applying a heat treatment to close the bonding interface. The process further comprises, before the step of bringing into contact, depositing, on the main surface of the first and/or second substrate, a bonding layer comprising a non-metallic material that is permeable to dihydrogen and that has, at the temperature of the heat treatment, a yield strength lower than that of at least one of the materials of the first substrate and of the second substrate located at the bonding interface. The layer has a thickness between 1 and 6 nm, and the heat treatment is carried out at a temperature lower than or equal to 900° C., and preferably lower than or equal to 600° C.

Process for hydrophilically bonding substrates

A detachable structure comprises at least two interfaces including an assembly interface and a favored-detachment interface, a receiver substrate, and a donor substrate comprising a working layer that is to be transferred, arranged on an initial substrate. The favored-detachment interface is situated between the working layer and the initial substrate, and the assembly interface is situated between the working layer and the receiver substrate. The assembly interface has an assembly-interruption zone comprising at least one cavity present in the receiver substrate or in the working layer, and the assembly-interruption zone is located in a peripheral region of the detachable structure.

Detachable structure used for transferring or handling layers, and process for transferring a layer using the detachable structure

A method for directly bonding a first and a second substrate. The method comprises removing surface oxide layers from bonding faces of the first and of the second substrate, and hydrogen passivation of the bonding faces, then, in a vacuum, electron impact hydrogen desorption on the bonding faces followed by placement of the bonding faces in intimate contact with one another.

Bonding method with electron-stimulated desorption

The invention relates to a method for checking an assembly comprising first (W) and second (W) joined substrates, comprising the following steps: a) transmitting an ultrasonic excitation signal towards the assembly by means of an ultrasonic transducer () located on the front face (A) side of the first substrate (W); b) measuring, using the transducer (), an ultrasonic feedback signal including at least one echo (EF) of the excitation signal on the rear face (B) of the second substrate (W); c) calculating, using a processing circuit (), a spectral signal representative of the change in frequency of an overall reflection coefficient of the assembly, defined as the ratio between the feedback signal measured in step b) and the excitation signal; and d) deriving, from said spectral signal, information relating to the quality of the bond between the first (W) and second (W) substrates.

Method and device for checking a bond between two substrates

A process includes the successive steps of: a) providing first and second substrates, each including a first surface and an opposite, second surface, lateral edges connecting the first and second surfaces, b) bonding the first substrate to the second substrate by direct bonding with the first surfaces of the first and second substrates so as to form a bonding interface (IC), and making the lateral edges of the first and second substrates hydrophobic on either side of the bonding interface (IC).

Method for bonding by direct adhesion

A method for manufacturing a semiconductor structure, including: direct bonding a substrate to be handled with a handle substrate via a bonding layer covering the handle substrate, to form a temporary structure capable of withstanding technological steps; disassembling the temporary structure at the bonding layer to separate the substrate to be handled from the handle substrate; and a prior depositing the bonding layer onto the handle substrate and/or onto the substrate to be handled, the bonding layer including a porous material including, an inorganic matrix and organic compounds connected or not to the matrix, and the disassembling is carried out by providing a thermal budget for disassembly to the intermediate structure, the providing resulting in a spontaneous disassembly of the temporary structure occurring at the bonding layer.

Method for manufacturing a semiconductor structure with temporary direct bonding using a porous layer

The invention provides a method of fabricating an electromechanical structure presenting a first substrate including a layer of monocrystalline material covered in a sacrificial layer that presents a free surface, the structure presenting a mechanical reinforcing pillar in the sacrificial layer, the method including etching a well region in the sacrificial layer to define a mechanical pillar; depositing a first functionalization layer of the first material to at least partially fill the well region and cover the free surface of the sacrificial layer around the well region; depositing a second material different from the first material for terminating the filling of the well region to thereby cover the first functionalization layer around the well region, planarizing the filler layer, the pillar being formed by the superposition of the first material and second material in the well region; and releasing the electromechanical structure by removing at least partially the sacrificial layer.

Method of fabricating an electromechanical structure including at least one mechanical reinforcing pillar

A microsystem and/or nanosystem type device is disclosed, comprising:

Method for making a suspended membrane structure with buried electrode

The invention relates to a method for manufacturing a multilayer strucute on a first substrate, the method including: using the first substrate made of a first material having a Young's modulus Eand a thickness e, and using a second substrate covered by the multilayer structure, the second substrate being made of a second material having a Young's modulus Ethat is different from the Young's modulus Eand a thickness e, the thicknesses eand ecomplying, plus or minus 10%, with the relation (I); molecularly bonding the first substrate and the multilayer structure together; and removing the second substrate.

Method for manufacturing a multilayer structure on a substrate

A method for producing a device including plural cavities defined between a substrate in at least one given semiconductor material and a membrane resting on a top of insulating posts projecting from the substrate, the method allowing a height of the cavity or cavities to be adapted independently of a height of the insulating posts and allowing cavities of different heights to be formed.

Method for producing a device comprising cavities formed between a suspended element resting on insulating pads semi-buried in a substrate and this substrate

The process for the production of at least one silicon-based nanoelement (), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer () comprising electrically doped silicon; forming, on the first layer (), a second layer () based on silicon oxide with carbon atoms () dispersed in the said second layer (); and exposing the first and second layers () to an oxidizing atmosphere, so as to oxidize at least a first section () of the first layer () at the interface of the said first layer () with the second layer () and to form the said at least one nanoelement () at the said first section ().

Process for producing at least one silicon-based nanoelement in a silicon oxide section and process for the manufacture of a device employing the production process

A device being a micro-system and/or a nano-system which includes a first substrate, having at least one lower electrode and at least one dielectric layer, and includes an intermediate substrate extending across a main plane of the device and including a moving portion. The intermediate substrate is attached, outside the moving portion, by molecular bonding to the first substrate. The moving portion faces at least a portion of the lower electrode. The device also includes an upper substrate, attached to the intermediate substrate. The moving portion is movable between the lower electrode and the upper substrate. The first, intermediate, and upper substrates extend in a plane parallel to the main plane of the device. The lower electrode detects a component of the movement of the moving portion perpendicular to the plane of the device.

Structure with a moving portion and a buried electrode for movement detection included in a multi-substrate configuration

The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps: a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate; b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer; c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer; d) making a bonding layer on the sacrificial layer; e) bonding a second substrate on the bonding layer; and f) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.

Method of fabricating an electromechanical device including at least one active element

The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making:

Heterogeneous substrate including a sacrificial layer, and a method of fabricating it

The invention provides a method of fabricating and electromechanical device having an active element on at least one substrate, the method having the steps of: a) making a heterogeneous substrate having a first portion, an interface layer, and a second portion, the first portion including one or more buried zones sandwiched between first and second regions formed in a first monocrystalline material, the first region extending to the surface of the first portion, and the second region extending to the interface layer, at least one said buried zone being made at least in part out of a second monocrystalline material so as to make it selectively attackable relative to the first and second regions; b) making openings from the surface of the first portion and through the first region, which openings open out to at least one said buried zone; and c) etching at least part of at least one buried zone to form at least one cavity so as to define at least one active element that is at least a portion of the second region between said cavity and said interface layer; wherein the first and second portions of the substrate are constituted respectively from first and second substrates that are assembled together by bonding, at least one of them including at least one said interface layer over at least a fraction of its surface.

Growing community of inventors

La Murette, France

Vincent Larrey