Applied Materials, Inc.

Intevac, Inc.

Vinay K Prabhakar

Abdul Aziz Khaja

Venkata Sharat Chandra Parimi

Prashant Kumar Kulshreshtha

Sungwon Ha

Viren Kalsekar

Sarah Michelle Bobek

Kwangduk Douglas Lee

Babak Adibi

Juan Carlos Rocha-Alvarez

Ganesh Balasubramanian

Terry Bluck

Satish Radhakrishnan

Jian Li

Zheng John Ye

Edward P Hammond

Jeongmin Lee

Fei Wu

Byung Seok Kwon

Zonghui Su

Badri N Ramamurthi

Moon Chun

Xiaoquan Min

Terry Pederson

Bushra Afzal

Henry Hieslmair

Satya Teja Babu Thokachichu

Satya Thokachichu

Karthik Janakiraman

Kartik Bhupendra Shah

Rui Cheng

Jianhua Zhou

Vishwas Kumar Pandey

Zubin Huang

Diwakar N Kedlaya

Umesh M Kelkar

Nitin Pathak

Ratsamee Limdulpaiboon

Anjana M Patel

Elizabeth Neville

Karthik Thimmavajjula Narasimha

Arun Chakravarthy Chakravarthy

Lu Xu

Liangfa Hu

William Eugene Runstadler, Jr

Dharma Ratnam Srichurnam

Hiroyuki Ogiso

Rick Gilbert

Siva Chandrasekar

Sang Heon Park

Rajath Kumar Lakkenahalli Hiriyannaiah

Hossein Rezvantalab

Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may include a top surface and side surfaces. The gas splitter may define a first and second gas inlets, with each gas inlet extending through one side surface. The gas splitter may define first and second gas outlets extending through the top surface. The gas splitter may define first and second gas lumens that extend between and fluidly couple each gas inlet with corresponding gas outlets. The gas splitter may define mixing channels that include a mixing outlet extending through a side surface and a mixing inlet extending through the top surface. The systems may include output manifolds seated on the lid plate. The systems may include output weldments that fluidly couple each mixing outlet with a respective one of the output manifolds.

Semiconductor processing system with a manifold for equal splitting and common divert architecture

Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.

Chamber configurations and processes for particle control

Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports. Each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may also include an end effector coupled with the rotatable shaft. The systems may include an exhaust foreline including a plurality of foreline tails. Each foreline tail of the plurality of foreline tails may be fluidly coupled with a separate processing region of the plurality of processing regions. The systems may include a plurality of throttle valves.

Multiple process semiconductor processing system

Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.

Electrostatic chuck design with improved chucking and arcing performance

A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

Dual RF for controllable film deposition

In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300 C to about 700 C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.

Plasma-enhanced chemical vapor deposition of carbon hard-mask

Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

Pedestal for substrate processing chambers

A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.

Substrate pedestal for improved substrate processing

A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.

Process chamber with reduced plasma arc

Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

Heated pedestal design for improved heat transfer and temperature uniformity

Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.

Targeted heat control systems

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Cupertino, CA, United States of America

Vinay K Prabhakar