Georgia Tech Research Corporation

Vijay Sukumaran

Venkatesh V Sundaram

Rao R Tummala

Fuhan Liu

Qiao Chen

Vivek Sridharan

Disclosed herein are, for instance, methods for producing through package vias in a glass interposer. For instance, disclosed herein is a method for producing through package vias in a glass interposer comprising laminating a polymer on at least a portion of a top surface of a glass interposer, removing at least a portion of the polymer and the glass interposer to form a through via, filling at least a portion of the through via with a metal conductor to form a metallization layer, and selectively removing a portion of the metallization layer to form a metalized through package via. Other methods are also disclosed, along with through-package-via structures in glass interposers produced therefrom.

Through-package-via (TPV) structures on inorganic interposer and methods for fabricating same

Aspects of the present disclosure generally relate to a microelectronic package including a plurality of through vias having walls in a glass interposer having a top portion and a bottom portion. The microelectric package may also include a stress relief barrier on at least a portion of the top and bottom portions of the glass interposer. The microelectric package may further include a metallization seed layer on at least a portion of the stress relief layer and a conductor on at least a portion of the metallization seed layer. The conductor extends through at least a portion of the plurality of the through vias, forming a plurality of metalized through package vias. At least a portion of the through vias are filled with the stress relief layer or the metallization seed layer.

Growing community of inventors

Atlanta, GA, United States of America

Vijay Sukumaran