Axcelis Technologies, Inc.

Varian Semiconductor Equipment Associates, Inc.

Eaton Corporation

Other

American Science and Engineering, Inc.

Twin Creeks Technologies, Inc.

Axchlisrtechnologies, Inc.

Eaton Semi-conductor Implantation Corporation

Victor M Benveniste

Frank Sinclair

Peter Lawrence Kellerman

Bon-Woong Koo

Svetlana Radovanov

William F DiVergilio

James S Buff

Michael A Graf

Robert D Rathmell

Shardul Patel

John Zheng Ye

Craig Richard Chaney

Kenneth Harry Purser

Yongzhang Huang

Kourosh Saadatmand

Eric R Harrington

Peter F Kurunczi

Costel Biloiu

Neil J Bassom

Bo H Vanderberg

Alexander S Perel

Christopher A Rowland

Allen E Armstrong

Jiong Chen

Oliver V Naumovski

Edward K McIntyre, Jr

Joseph C Olson

Anthony Renau

John Youngfu Chen

Geoffrey Ryding

Thomas N Horsky

Zhimin Wan

Dale K Stone

Kevin M Daniels

Edward Eisner

Christopher W Campbell

Wilhelm P Platow

D Jeffrey Lischer

Robert C Lindberg

Joseph Ferrara

Patrick Richard Splinter

Frederick M Carlson

Lyudmila Stone

Antonella Cucchetti

Eric R Cobb

Raymond Paul Boisseau

Tyler Burton Rockwell

Brian S Freer

Paul J Bjorkholm

Richard M White

Jun Lu

Allan D Weed

Ernest E Allen

Michael Cristoforo

Douglas A Brown

Michel Pharand

Gordon Angel

Jeffrey A Burgess

David Richard Swenson

Steven C Borichevsky

David Edwards, Jr

William E Reynolds

Thomas Parrill

Bon Woong Koo

Mehran Asdigha

Mayur Jagtap

William K Loizides

Stephen M Quinn

Alexander F Pless

Perry J Justesen

Gary J Rosen

Walter Hrynyk

John J Schussler

Michasel Cristoforo

William F DiVergili

Michael P Bradley

Robert Rathmell

Yougzhang Huang

Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface seals the volume of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array.

Inductively coupled RF plasma source with magnetic confinement and Faraday shielding

A method may include: generating an ion beam from an ion source, the ion beam having an initial direction of propagation; deflecting the ion beam at an initial angle of inclination with respect to the initial direction of propagation; passing the ion beam through an aperture in a magnetic assembly; and generating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation.

Techniques and apparatus for manipulating an ion beam

An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.

Plasma potential modulated ion implantation system

An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber.

Excited gas injection for ion implant control

An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma.

Inductively coupled plasma flood gun using an immersed low inductance RF coil and multicusp magnetic arrangement

A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.

System and method for manipulating an ion beam

An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.

A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma. An exit aperture may be provided in the plasma chamber to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of the associated ion implantation system. In one embodiment, magnets are disposed on opposite sides of the aperture and are used to manipulate the electrons of the plasma.

Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement

Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Techniques for improving extracted ion beam quality using high-transparency electrodes

An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.

Apparatus for controlling the temperature of an RF ion source window

Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.

Techniques for providing a multimode ion source

A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially 'racetrack' configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source.

Mass analysis magnet for a ribbon beam

An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.

Temperature controlled ion source

An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.

A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of 'virtual knobs' that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.

System and method for controlling deflection of a charged particle beam within a graded electrostatic lens

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Lyle, WA, United States of America

Victor M Benveniste