Vlsi Technology, Inc.

Victor H Okumoto

Francisca Tung

A method of forming conductive bumps on the bond pads of one or more ICs is described wherein a barrier metal layer such as TiW is first formed over the bond pads in order to passivate the surface of the one or more ICs, an electroplatable base comprising an adhesion metal layer is then formed over each of the bond pads by using a contact metal mask to screen off other portions of the IC surfaces, and a conductive bump is then formed on top of the electroplatable base by either electroplating or electroless bath techniques. A structure for holding a plurality of good IC dies while conductive bumps are being electroplated on their bond pads is also described.

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San Francisco, CA, United States of America

Victor H Okumoto