Georgia Tech Research Corporation

Northrop Grumman Systems Corporation

Avx Corporation

Venkatesh V Sundaram

Rao R Tummala

Madhavan Swaminathan

George E White

Sidharth Dalmia

Fuhan Liu

Nitesh Kumbhat

Nobuo Ogura

Pulugurtha Markondeya Raj

Siddharth Ravichandran

Vijay Sukumaran

Vivek Sridharan

Qiao Chen

Leonard George Chorosinski

David Ross McGregor

Deepukumar M Nair

Parrish E Ralston

Lynne E Dellis

Cheong-Wo Hunter Chan

Chia-Te Chou

Xian Qin

Abhishek Choudhury

Madhavan Swanimathan

Semiconductor packages and, more particularly, chip-embedded semiconductor packages. The packages include core panels with apertures extending through the core panel. Semiconductor chips are embedded within chip apertures. A molding compound can be positioned along one side of the core panel. The semiconductor chips can be embedded within the molding compound. The semiconductor chips also can be adhered to the molding compound. The coefficient of thermal expansion (CTE) values of the core panels can be tailored to decrease warpage of the package as the semiconductor chip heats during use.

Embedded semiconductor packages and methods thereof

The present disclosure describes semiconductor packages and, more particularly, chip-embedded semiconductor packages. The packages include core panels with apertures extending through the core panel. Semiconductor chips are embedded within chip apertures. A molding compound can be positioned along one side of the core panel. In some examples, the semiconductor chips are embedded within the molding compound. In other examples, the semiconductor chips are adhered to the molding compound. The coefficient of thermal expansion (CTE) values of the core panels described herein can be tailored to decrease warpage of the package as the semiconductor chip heats during use.

Disclosed herein are, for instance, methods for producing through package vias in a glass interposer. For instance, disclosed herein is a method for producing through package vias in a glass interposer comprising laminating a polymer on at least a portion of a top surface of a glass interposer, removing at least a portion of the polymer and the glass interposer to form a through via, filling at least a portion of the through via with a metal conductor to form a metallization layer, and selectively removing a portion of the metallization layer to form a metalized through package via. Other methods are also disclosed, along with through-package-via structures in glass interposers produced therefrom.

Through-package-via (TPV) structures on inorganic interposer and methods for fabricating same

A method of encapsulating integrated circuits is disclosed. The method includes placing a front side of a semiconductor wafer, having partially cut scribe lines that separate a plurality of semiconductor dies, onto a backside of a dicing tape, grinding a backside of the cut semiconductor wafer to singulate the plurality of semiconductor dies, exposing the backside of the dicing tape to ultraviolet (UV) light to soften the dicing tape between each of the plurality of semiconductor dies and stretching the dicing tape to increase a distance between the plurality of semiconductor dies, laminating a backside and sides of each of the plurality of semiconductor dies with a first layer of encapsulant material, exposing a front side of the dicing tape to UV light to release the dicing tape from the plurality of semiconductor dies, and laminating a front side of the semiconductor dies with a second layer of encapsulant material.

Encapsulation process for semiconductor devices

An optical interposer that includes a glass substrate having one or more optical vias extending through the glass substrate. A first optical polymer may be bonded to the substrate and to interior surfaces of the one or more optical vias. Implementations include one or more optical via cores comprising a second optical polymer that has a greater refractive index than the first optical polymer. The one or more optical via cores may be at least partially surrounded by the first optical polymer. Embodiments include encapsulated optical waveguides in communication with the optical vias and/or via cores. Example implementations include layers of electrical insulation, electrical traces, and electrical vias. A method of manufacture includes forming the optical vias by laser ablation. Certain embodiments may include chemically etching the inside of the vias to improve surface roughness.

Interposer with polymer-filled or polymer-lined optical through-vias in thin glass substrate

Aspects of the present disclosure generally relate to a microelectronic package including a plurality of through vias having walls in a glass interposer having a top portion and a bottom portion. The microelectric package may also include a stress relief barrier on at least a portion of the top and bottom portions of the glass interposer. The microelectric package may further include a metallization seed layer on at least a portion of the stress relief layer and a conductor on at least a portion of the metallization seed layer. The conductor extends through at least a portion of the plurality of the through vias, forming a plurality of metalized through package vias. At least a portion of the through vias are filled with the stress relief layer or the metallization seed layer.

The various embodiments of the present invention provide a stress-relieving, second-level interconnect structure that is low-cost and accommodates TCE mismatch between low-TCE packages and PCBs. The various embodiments of the interconnect structure are reworkable and can be scaled to pitches from about 1 millimeter (mm) to about 150 micrometers (&#x3bc;m). The interconnect structure comprises a dielectric body element and at least one interconnection array that provides a conductive path between two electronic components. Each interconnection array comprises a plurality of wires that provide both conductivity and compliance to the overall interconnect structure. The versatility and scalability of the interconnect structure of the present invention make it a desirable structure to utilize in current two-dimensional and ever-evolving three-dimensional IC structures.

Interconnect structures and methods of making the same

A 3D interconnect structure comprising an ultra-thin interposer having a plurality of ultra-high density of through-via interconnections defined therein. The 3D interposer electrically connects first and second electronic devices in vertical dimension and has the same or similar through-via density as the first or second electronic devices it connects. The various embodiments of the interconnect structure allows 3D ICs to be stacked with or without TSVs and increases bandwidth between the two electronic devices as compared to other interconnect structures of the prior art. Further, the interconnect structure of the present invention is scalable, testable, thermal manageable, and can be manufactured at relatively low costs. Such a 3D structure can be used for a wide variety of applications that require a variety of heterogeneous ICs, such as logic, memory, graphics, power, wireless and sensors that cannot be integrated into single ICs.

Ultra-thin interposer assemblies with through vias

Provided is a stress-relieving, second-level interconnect structure that is low-cost and accommodates thermal coefficient of expansion (TCE) mismatch between low-TCE packages and printed circuit boards (PCBs). The interconnect structure comprises at least a first pad, a supporting pillar, and a solder bump, wherein the first pad and supporting pillar are operative to absorb substantially all plastic strain, thereby enhancing compliance between the two electronic components.

Stress relieving second level interconnect structures and methods of making the same

The various embodiments of the present invention provide fine pitch, chip-to-substrate interconnect assemblies, as well as methods of making and using the assemblies. The assemblies generally include a semiconductor having a die pad and a bump disposed thereon and a substrate having a substrate pad disposed thereon. The bump is configured to electrically interconnect at least a portion of the semiconductor with at least a portion of the substrate when the bump is contacted with the substrate pad. In addition, when the bump is contacted to the substrate pad, at least a portion of the bump and at least a portion of the substrate pad are deformed so as to create a non-metallurgical bond therebetween.

Interconnect assemblies and methods of making and using same

The various embodiments of the present invention provide a novel chip-last embedded structure, wherein an IC is embedded within a one to two metal layer substrate. The various embodiments of the present invention are comparable to other two-dimensional and three-dimensional WLFO packages of the prior art as the embodiments have similar package thicknesses and X-Y form factors, short interconnect lengths, fine-pitch interconnects to chip I/Os, a reduced layer count for re-distribution of chip I/O pads to ball grid arrays (BGA) or land grid arrays (LGA), and improved thermal management options.

Chip-last embedded interconnect structures

Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.

Thin-film capacitor structures embedded in semiconductor packages and methods of making

Organic laminate stack ups are disclosed for a variety of applications, including high frequency RF applications. One or more inner core layers may be disposed between outer layers along with bondply or prepreg layers as needed. Discrete devices, including surface mount components and flip chips, may be embedded within the organic laminate stack up structures. The embedding of the discrete devices, which may be active or passive devices, may be in the form of a layer of bondply or prepreg encapsulating the discrete devices. In addition or in the alternative, cavities may be formed in at least the outer layers for housing discrete devices, which include surface mount components, flip chips, and wire bonded integrated circuits. A variety of caps may be utilized to seal the cavities. Further, shielding may be provided for the organic laminate stack up structure, including through a wall of vias or a plated trench cut along at least one side of the stack up structure. Each stack up structure may be packaged in a variety of ways, including as a surface mount component, ball grid array, or land grid array.

Heterogeneous organic laminate stack ups for high frequency applications

The present invention provides all organic fully-packaged miniature bandpass filters, baluns, diplexers, multiplexers, couplers and a combination of the above manufactured using liquid crystalline polymer (LCP) and other multilayer polymer based substrates. These devices are manufactured using one or more LCP layers having integrated passive components formed thereon to provide the density and performance necessary for multi-band wireless devices. In the designs involving multiple LCP layers, the LCP layers are separated by prepeg layers. In accordance with an aspect of the present invention, coplanar waveguide, hybrid stripline/coplanar waveguide and/or microstrip topologies are utilized to form the integrated passive components, and the devices can be mass produced on large area panels at least 18 inches by 12 inches with line widths smaller than 10 um.

Liquid crystalline polymer and multilayer polymer-based passive signal processing components for RF/wireless multi-band applications

The present invention includes methods for making liquid crystalline polymer (LCP) interconnect structures using a high temperature and low temperature single sided LCP, where both the high and low temperature LCP are provided with a z-axis connection. The single sided conductive layer is a bus layer to form z-axis conductive stud within the high and low temperature LCP. High and low temperature LCP layers are etched or built up to form circuit patterns and subsequently bonded together to form final multilayer circuit pattern where the low temperature LCP melts to form both dielectric to dielectric bond to high temperature LCP circuit layer, and dielectric to conductive bond.

Growing community of inventors

Johns Creek, GA, United States of America

Venkatesh V Sundaram