Average Co-Inventor Count = 3.80
ph-index = 19
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. International Business Machines Corporation (425 from 163,671 patents)
2. Globalfoundries Inc. (26 from 5,671 patents)
3. Adeia Semiconductor Bonding Technologies Inc. (8 from 1,847 patents)
4. Renesas Electronics Corporation (3 from 7,504 patents)
5. Globalfoundries U.S. Inc. (2 from 896 patents)
6. Kabushiki Kaisha Toshiba (1 from 52,582 patents)
7. Freescale Semiconductor,inc. (1 from 5,480 patents)
8. Stmicroelectronics Gmbh (1 from 2,864 patents)
9. Globalfoundries U.S. 2 LLC (1 from 59 patents)
10. Elpis Technologies Inc. (1 from 51 patents)
11. Adeia Semiconductor Solutions LLC (1 from 17 patents)
461 patents:
1. 12432960 - Wraparound contact with reduced distance to channel
2. 12417944 - Formation of trench silicide source or drain contacts without gate damage
3. 12414328 - Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transistors
4. 12376369 - FinFET devices
5. 12324184 - Replacement gate cross-couple for static random-access memory scaling
6. 12317555 - Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor
7. 12310054 - Late replacement bottom isolation for nanosheet devices
8. 12255204 - Vertical FET replacement gate formation with variable fin pitch
9. 12224312 - Field effect transistors with bottom dielectric isolation
10. 12119341 - Electrostatic discharge diode having dielectric isolation layer
11. 12119393 - Punch through stopper in bulk finFET device
12. 12100746 - Gate-all-around field effect transistor with bottom dielectric isolation
13. 12100744 - Wrap around contact process margin improvement with early contact cut
14. 12087691 - Semiconductor structures with backside gate contacts
15. 12009435 - Integrated nanosheet field effect transistors and floating gate memory cells