Applied Materials, Inc.

Solyndra, LLC

Vedapuram S Achutharaman

Jennifer Y Sun

Biraja Prasad Kanungo

Tom K Cho

Vahid Firouzdor

Ying Di Zhang

Sundar Ramamurthy

Cory M Czarnik

Christopher Sean Olsen

Mehran Behdjat

Olivier Luere

Olivier Joubert

Yoshitaka Yokota

Rajinder Dhindsa

Randhir P S Thakur

Philip Allan Kraus

Abhilash J Mayur

James Rogers

Dean C Jennings

Vijay Parihar

Johanes F Swenberg

Timothy N Thomas

Sunil Srinivasan

Jason Andrew Kenney

Mahalingam Venkatesan

Wen Teh Chang

Tarpan Dixit

Joseph Michael Ranish

Aaron Muir Hunter

Khurshed Sorabji

Jallepally Ravi

Balasubramanian Ramachandran

Shulin Wang

H Peter Hey

Juan Chacin

Klaus-Dieter Rinnen

Hali J Forstner

Ho T Fang

Ying Zhang

A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 μm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of YO, over 0 mol % to 60 mol % of ZrO, and 0 mol % to 9 mol % of AlO.

Ion beam sputtering with ion assisted deposition for coatings on chamber components

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 &#x3bc;m, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of YO, over 0 mol % to 60 mol % of ZrO, and 0 mol % to 9 mol % of AlO.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 &#x3bc;m, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF, ErAlO, ErAlO, and a ceramic compound comprising YAlOand a solid-solution of YO&#x2014;ZrO.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 &#x3bc;m, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er&#x2014;Y composition, an Er&#x2014;Al&#x2014;Y composition, an Er&#x2014;Y&#x2014;Zr composition, and an Er&#x2014;Al composition.

The implementations described herein generally relate to a process kit suitable for use in a semiconductor process chamber, which reduces edge effects and widens the processing window with a single edge ring as compared to conventional process kits. The process kit generally includes an edge ring disposed adjacent to and surrounding a perimeter of a semiconductor substrate in a plasma chamber. A dimension of a gap between the substrate and the edge ring is less than about 1000 &#x3bc;m, and a height difference between the substrate and the edge ring is less than about (+/&#x2212;) 300 &#x3bc;m. The resistivity of the ring is less than about 50 Ohm-cm.

Universal process kit

Methods are disclosed for etching a substrate. The method includes preferentially coating cover ring relative other chamber components in the processing chamber, while under vacuum, and while a substrate is not present in the processing chamber. The substrate is subsequently etched the processing chamber. After etching, the interior of the processing chamber is cleaned after the substrate has been removed.

Minimization of ring erosion during plasma processes

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 &#x3bc;m, wherein the plasma resistant rare earth oxide has a composition of 40-45 mol % of YO, 5-10 mol % of ZrO, 35-40 mol % of ErO, 5-10 mol % of GdO, and 5-15 mol % of SiO.

Composite edge ring

A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 &#x3bc;m.

A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800&#xb0; C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

Method of thermally treating silicon with oxygen

Water cooled gas injector

A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

Fast axis beam profile shaping for high power laser diode based annealing system

A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IBVIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.

Real time process monitoring and control for semiconductor junctions

Thermal oxidation of silicon using ozone

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Saratoga, CA, United States of America

Vedapuram S Achutharaman