Samsung Electronics Co., Ltd.

Vasily Pashkovskiy

Sang Ki Nam

Woong Ko

Sungyong Lim

Sunggil Kang

Doug-Yong Sung

Kwangyoub Heo

Akira Koshiishi

Beomjin Yoo

Se-jin Oh

Ki-ho Hwang

Sang Heon Lee

Hyung Joon Kim

Jung Hyun Cho

Sang-Heon Lee

Jeong Yun Lee

Youngdo Kim

Sangki Nam

Kyung Yub Jeon

Yuri Nikolaevich Tolmachev

Vladimir Volynets

Sejin Oh

Chansoo Kang

Beom Jin Yoo

Hoonseop Kim

Changsoon Lim

Yung Hee Lee

Sang Jean Jeon

Vladimir Vsevolodovich Protopopov

Kwang-Youb Heo

Jehun Woo

Masahiko Tomita

Andrey Ushakov

Won Ceak Pak

Sung Chang Park

A device for measuring a density of plasma is provided. The device includes a first sensor configured to measure a microwave spectrum of an input port reflection parameter of plasma, the first sensor having a probe including a conductive material and a flat plate shape, and a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor.

Device for measuring density of plasma, plasma processing system, and semiconductor device manufacturing method using the same

A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

Hollow cathode, an apparatus including a hollow cathode for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using a hollow cathode

Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

Plasma processing apparatus and method of manufacturing semiconductor device using the same

Disclosed herein are a microwave probe capable of precisely detecting a plasma state in a plasma process, a plasma monitoring system including the probe, and a method of fabricating a semiconductor device using the system. The microwave probe includes a body extending in one direction and a head which is connected to one end of the body and has a flat plate shape. In addition, in the plasma process, the microwave probe is non-invasively coupled to a chamber such that a surface of the head contacts an outer surface of a viewport of the chamber, and the microwave probe applies a microwave into the chamber through the head and receives signals generated inside the chamber through the head.

Microwave probe, plasma monitoring system including the microwave probe, and method for fabricating semiconductor device using the system

In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

Plasma processing apparatus and method, and method of manufacturing semiconductor device using the same

A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.

Method of plasma processing and apparatuses using the method

An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

Apparatus and method to generate plasma

Growing community of inventors

Suwon-si, South Korea

Vasily Pashkovskiy