Kla-Tencor Technologies Corporation

Varoujan Chakarian

Gabor D Toth

Douglas K Masnaghetti

Gian Francesco Lorusso

Mark Allen Neil

Dave Bakker

Systems and methods for acquiring information about a defect on a specimen are provided. One system includes an optical subsystem configured to acquire topography information about the defect. The system also includes an electron beam subsystem configured to acquire additional information about the defect. One method includes acquiring first data for the defect using an optical technique and second data for the defect using an electron beam technique. The first and second data is acquired while the specimen is disposed in a single vacuum chamber. The method also includes determining topography information about the defect from the first data. In addition, the method includes determining additional information about the defect from the second data.

Systems and methods for acquiring information about a defect on a specimen

One embodiment disclosed relates to a method for automated focusing of an electron image. An EF cut-off voltage is determined. In compensation for a change in the EF cut-off voltage, a focusing condition is adjusted. Adjusting the focusing condition may comprise, for example, adjusting a wafer bias voltage in correspondence to the change in cut-off voltage. Another embodiment disclosed relates to a method for automated focusing of an electron image in a scanning electron imaging apparatus. A focusing condition of a primary electron beam in a first image plane is varied so as to maximize an intensity of a secondary electron beam through an aperture in a second image plane.

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Fremont, CA, United States of America

Varoujan Chakarian