Varian Associates, Inc.

Novellus Systems Incorporated

Vance E Hoffman, Jr

Ronald R Cochran

John C Helmer

Young H Park

Geri M Actor

R Ernest Demaray

Robert L Anderson

Richard E Demaray

Stephen M Higa

Patrick O Miller

Pamela R Patterson

Sputtering apparatus using a collimating filter to limit the angles at which sputtered particles will reach the surface of the substrate or workpiece being processed is shown. The sputtering apparatus relies on a combination of a planar sputter source larger in size than the workpiece and having highly uniform emission characteristics across the much of its surface, including its center; a collimating filter; and low operating pressure to avoid scattering of sputtered atoms after they have passed through the collimation filter. In the preferred embodiment, the collimation filter is made from a material which has substantially the same thermal coefficient of expansion as the film which is deposited on the substrate. In one specific embodiment, a titanium collimation filter is used when the sputtering system is used to deposit films of titanium, titanium nitride or titanium/tungsten alloy.

Collimated deposition apparatus

Sputtering apparatus and method which are particularly suitable for forming step coatings. A workpiece is supported in a chamber, particles are emitted from a sputter source in a substantially uniform manner throughout an area of greater lateral extent than the workpiece, the pressure within the chamber is maintained at a level which is sufficiently low to prevent substantial scattering of the particles between the source and the workpiece, and the particles are passed through a collimating filter having a plurality of transmissive cells with a length to diameter ratio on the order of 1:1 to 3:1 positioned between the source and the workpiece to limit the angles at which the particles can impinge upon the workpiece.

Collimated deposition apparatus and method

A method for automatically controlling a collimated sputtering source that is controllable by a computer to compensate for the build-up of sputtered material on the collimator. The method involves providing software for the computer including a formula to calculate a multiplier as a function of the age of the collimator, sequentially depositing film on a series of substrates using the sputtering source, monitoring the age of the collimator, and using the software to periodically adjust the value of a controllable sputtering parameter as a function of the multiplier. The sputtering parameter is automatically adjusted by the software such that a property of the film deposited by the source on the series of substrates does not substantially vary among the substrates as sputtered material builds up on the collimator.

Method for controlling a collimated sputtering source

A magnetron sputter source providing a predetermined erosion distribution over the surface of a sputter target material is described. When the distribution is uniform, close coupling of the sputter target with the substrate to be coated is achieved, resulting in improved collection efficiency of the sputtered material by the wafer and improved film thickness uniformity. Elimination of erosion grooves provide for greater target consumption and longer target life. The cathode magnetron sputter source includes a rotating magnet assembly of a specific shape and a specific magnetic strength provides the desired erosion distribution. The target may be dished to improve uniformity near the periphery of the wafer. The resulting magnetron cathode is used for the deposition of thin films. Further applications of uniform magnetron erosion or preselected erosion include uniform or preselected magnetron sputter etch or reactive ion etch and concurrent deposition and etch.

Rotating sputtering apparatus for selected erosion

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Los Altos, CA, United States of America

Vance E Hoffman, Jr