International Business Machines Corporation

Vall F McClean

Charles Leon Arvin

Brian Richard Sundlof

Harry David Cox

Srinivasa S N Reddy

Hsichang Liu

Arthur Gilman Merryman

Carla A Bailey

Hua Gan

One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer.

Intermetallic diffusion block device and method of manufacture

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Poughkeepsie, NY, United States of America

Vall F McClean