Asml Netherlands B.v.

Carl-zeiss-smt Ag

Other

Koninklijke Philips Corporation N.v.

Carl Zeiss Smt Gmbh

Asml Lithography B.v.

Stichting Nationaal Lucht&#x2014;en Ruimtevaartlaboratorium

Vadim Yevgenyevich Banine

Johannes Hubertus Josephina Moors

Erik Roelof Loopstra

Maarten Marinus Johannes Wilhelmus Van Herpen

Levinus Pieter Bakker

Andrei Mikhailovich Yakunin

Vladimir Vitalevitch Ivanov

Derk Jan Wilfred Klunder

Wouter Anthon Soer

Vladimir Mihailovitch Krivtsun

Konstantin Nikolaevitch Koshelev

Gerardus Hubertus Petrus Maria Swinkels

Lucas Henricus Johannes Stevens

Sander Frederik Wuister

Andrey Alexandrovich Nikipelov

Olav Waldemar Vladimir Frijns

Bastiaan Theodoor Wolschrijn

Konstantin Nikolaevich Koshelev

Pieter Willem Herman De Jager

Jan Bernard Plechelmus Van Schoot

Frank Jeroen Pieter Schuurmans

Roelof Koole

Arie Jeffrey Den Boef

Yvonne Wendela Kruijt-Stegeman

Marcel Mathijs Theodore Marie Dierichs

Martin Jacobus Johan Jak

Han-Kwang Nienhuys

Martinus Hendrikus Antonius Leenders

Arno Jan Bleeker

Johan Frederik Dijksman

Joannes Theodoor De Smit

Theodorus Marinus Modderman

Jozef Petrus Henricus Benschop

Jeroen Jonkers

Dzmitry Labetski

Hendrikus Gijsbertus Schimmel

Theodorus Hubertus Josephus Bisschops

Ralph Kurt

Andre Bernardus Jeunink

Harmen Klaas Van Der Schoot

Johannes Onvlee

Tjarko Adriaan Rudolf Van Empel

Gosse Charles De Vries

Wolfgang Singer

Harmeet Singh

Johannes Wangler

Hans Van Der Laan

Emiel Peeters

Antonius Johannes Josephus Van Dijsseldonk

Mark Kroon

Wilhelmus Cornelis Keur

Markus Weiss

Jan Evert Van Der Werf

Wilhelmus Petrus De Boeij

Vladimir Mikhailovich Krivtsun

Sjoerd Nicolaas Lambertus Donders

Marcus Adrianus Van De Kerkhof

Johannes Henricus Wilhelmus Jacobs

Jozef Maria Finders

Cheng-Qun Gui

Martinus Cornelis Maria Verhagen

Coen Adrianus Verschuren

Theodorus Petrus Maria Cadee

Dirk Heinrich Ehm

Heine Melle Mulder

Martin Antoni

Pieter-Jan Van Zwol

Jeroen Herman Lammers

Mária Péter

Erwin John Van Zwet

Richard Quintanilha

Maxim Aleksandrovich Nasalevich

Michael Jozef Mathijs Renkens

Borgert Kruizinga

Yuri Johannes Gabriël Van De Vijver

Antonius Theodorus Wilhelmus Kempen

Johannes Catharinus Hubertus Mulkens

William N Partlo

Hans Butler

Richard L Sandstrom

Engelbertus Antonius Fransiscus Van Der Pasch

Aleksey Yurievich Kolesnychenko

Michel Riepen

Johannes Petrus Martinus Bernardus Vermeulen

Koen Jacobus Johannes Maria Zaal

Johan Hendrik Klootwijk

Franciscus Johannes Joseph Janssen

Martinus Bernardus Van Der Mark

Christian Wagner

Markus Franciscus Antonius Eurlings

Richard Joseph Bruls

Ramon Pascal Van Gorkom

Paulus Martinus Maria Liebregts

Edwin Johan Buis

Adrianus Hendrik Koevoets

Paul Van Der Veen

David Ferdinand Vles

Frank Melzer

Axel Scholz

Hendrikus Robertus Marie Van Greevenbroek

A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has been selected to exhibit low wear; a clamping apparatus for actuating a clamping operation between the clamping surface and the substrate, wherein the clamping operation is defined at least in part by at least one interface characteristic between the clamping surface and the substrate; and a processing station, operable to apply an adjustment to a first property of the substrate to optimize at least one interface characteristic of a particular clamping operation in dependence on the clamping surface parameter and at least one substrate surface parameter which defines a second property of the substrate.

Lithographic apparatus

A lithographic apparatus has an object, the object includes: a substrate and optionally a lower layer on the substrate; an upper layer; and an intermediate layer between the upper layer and the substrate, wherein a bond strength between the intermediate layer and the substrate or lower layer is greater than a bond strength between the intermediate layer and the upper layer and the intermediate layer has a Young's Modulus and/or a Poisson ratio within 20% of that of the upper layer.

Lithographic apparatus comprising an object with an upper layer having improved resistance to peeling off

A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.

Component for use in a patterning device environment

A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.

Sensor mark and a method of manufacturing a sensor mark

A radiation sensor apparatus for determining a position and/or power of a radiation beam, the radiation sensor apparatus including a chamber to contain a gas, one or more sensors, and a processor. The chamber has a first opening and a second opening such that a radiation beam can enter the chamber through the first opening, propagate through the chamber generally along an axis, and exit the chamber through the second opening. Each of the one or more sensors is arranged to receive and detect radiation emitted from a region of the chamber around the axis. The processor is operable to use the radiation detected by the one or more sensors to determine a position and/or power of the radiation beam.

Radiation sensor apparatus

A method of patterning lithographic substrates, the method including using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.

Lithographic method

An imprint lithography apparatus is disclosed that includes an imprint template holder arranged to hold an imprint template, and a plurality of position sensors configured to measure change of the size and/or shape of the imprint template, wherein the position sensors are mechanically isolated from the imprint template. Also disclosed is a lithography method that includes using an imprint template to imprint a pattern onto a substrate, and measuring changes of the size and/or shape of the imprint template while imprinting the pattern onto the substrate.

Imprint lithography apparatus and method

A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane has one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 10cm, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are within some or all of the additional layers.

Membranes for use within a lithographic apparatus and a lithographic apparatus comprising such a membrane

Disclosed is a suppression filter having a profile defining at least two reflective surface levels, each reflected surface level being separated by a separation distance. The separation distance is such that the reflective suppression filter is operable to substantially prevent specular reflection of radiation at a first wavelength and at a second wavelength incident on said reflective suppression filter. Also disclosed is a radiation collector, radiation source and lithographic apparatus comprising such a suppression filter, and to a method of determining a separation distance between at least two reflective surface levels of a suppression filter.

Suppression filter, radiation collector and radiation source for a lithographic apparatus; method of determining a separation distance between at least two reflective surface levels of a suppression filter

A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.

Beam delivery apparatus and method

A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation () generated by inverse Compton scattering. Radiation () scattered by the target structure in reflection or transmission is detected () and properties of the target structure are calculated by a processor () based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

Metrology methods, radiation source, metrology apparatus and device manufacturing method

A pellicle that includes graphene is constructed and arranged for an EUV reticle. A multilayer mirror includes graphene as an outermost layer.

Graphene spectral purity filter

Methods and apparatus for generation of radiation by high harmonic generation, HHG. The apparatus comprises: a chamber for holding a vacuum, the chamber comprising a radiation input, a radiation output and an interaction region at which, in use, a medium is present, the chamber being arranged such that, in use, when driving radiation propagates through the radiation input and is incident upon the medium, the medium emits radiation via HHG, the emitted radiation propagating through the radiation output; and at least one plasma generator at the radiation input and/or the radiation output for generating a plasma volume allowing the driving radiation and emitted radiation, respectively, to propagate through the plasma volume.

Methods and apparatus for optical metrology

Growing community of inventors

Helmond, Netherlands

Vadim Yevgenyevich Banine