Applied Materials, Inc.

Uwe Paul Haller

Jianhua Zhou

Ganesh Balasubramanian

Hari Kishore Ambal

Juan Carlos Rocha-Alvarez

Hiroji Hanawa

Bok Hoen Kim

Kwangduk Douglas Lee

Jay D Pinson, Ii

Hari K Ponnekanti

Mukund Srinivasan

Ren-Guan Duan

Prashant Kumar Kulshreshtha

Zheng John Ye

Hemant P Mungekar

Xing Lin

Sungwon Ha

Swayambhu Prasad Behera

Jason K Foster

The present disclosure relate to methods and apparatus for temperature sensing and control during substrate processing. Substrate temperatures during processing, which are difficult to measure directly, may be determined by examination of deposited film properties or by measuring changes in power output over time of the substrate heating apparatus. Temperatures are determined for many substrates during processing, showing how substrate temperatures change over time, and the temperature changes are then used to build models via machine learning techniques. The models are used to adjust heating apparatus setpoints for future processing operations.

Virtual sensor for spatially resolved wafer temperature control

Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1&#xd7;10ohm-cm to about 1&#xd7;10ohm-cm in a temperature of about 250&#xb0; C. to about 700&#xb0; C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600&#xb0; C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system

Methods and apparatus for controlling the temperature of multi-zone heater in a process chamber are provided herein. In some embodiments, a method is provided to control a multi-zone heater disposed in a substrate support, wherein the multi-zone heater has a first zone and a second zone. In some embodiments, the method may include measuring a current drawn by the first zone at a first time; measuring a voltage drawn by the first zone at the first time; calculating the resistance of the first zone based upon the measured current and voltage drawn by the first zone at the first time; determining a temperature of the first zone based upon a predetermined relationship between the resistance and the temperature of the first zone; and adjusting the temperature of the first zone in response to the temperature determination.

Methods and apparatus for controlling temperature of a multi-zone heater in a process chamber

Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber

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San Jose, CA, United States of America

Uwe Paul Haller